FDS3992
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDS3992
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 4.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 11
nC
trⓘ - Rise Time: 23
nS
Cossⓘ -
Output Capacitance: 118
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.062
Ohm
Package:
SO-8
FDS3992
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDS3992
Datasheet (PDF)
..1. Size:647K fairchild semi
fds3992.pdf
August 2004FDS3992Dual N-Channel PowerTrench MOSFET100V, 4.5A, 62mFeatures Applications rDS(ON) = 54m (Typ.), VGS = 10V, ID = 4.5A DC/DC converters and Off-Line UPS Qg(tot) = 11nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Re
..2. Size:496K onsemi
fds3992.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
9.1. Size:125K fairchild semi
fds3912.pdf
October 2001FDS3912100V Dual N-Channel PowerTrench MOSFETGeneral Description FeaturesThese N-Channel MOSFETs have been designed 3 A, 100 V. RDS(ON) = 125 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DC RDS(ON) = 135 m @ VGS = 6 Vconverters using either synchronous or conventionalswitching PWM controllers. Fast switching speedThese MOSFETs
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