SL2333A Datasheet and Replacement
Type Designator: SL2333A
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 290 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: SOT23
SL2333A substitution
SL2333A Datasheet (PDF)
sl2333a.pdf

SL2333AP-Channel Enhancement Mode Field Effect TransistorProduct Summary V -12VDS I -6AD R ( at V =-4.5V)DS(ON) GS 40 mohm R ( at V =-2.5V)DS(ON) GS 50 mohm R ( at V =-1.8V)DS(ON) GS 70 mohmGeneral Description Trench Power LV MOSFET technology High Density Cell Design for Low RDS(ON) High Speed switchingApplications Ba
Datasheet: SL2192 , SL2302M , SL2309 , SL2309A , SL2314 , SL2318 , SL2319A , SL2328A , AON7403 , SL2343 , SL2347 , SL25N10 , SL2P03F , SL2P10A , SL30N02D , SL30N06D , SL3134K .
History: RU55200Q | NCEP0107AR | 2SK3483-ZK | SIL05N06 | AOC2804B | PHD87N03LT | GSM4946
Keywords - SL2333A MOSFET datasheet
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History: RU55200Q | NCEP0107AR | 2SK3483-ZK | SIL05N06 | AOC2804B | PHD87N03LT | GSM4946



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