SL2333A MOSFET. Datasheet pdf. Equivalent
Type Designator: SL2333A
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 4.5 nC
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 290 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: SOT23
SL2333A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SL2333A Datasheet (PDF)
sl2333a.pdf
SL2333AP-Channel Enhancement Mode Field Effect TransistorProduct Summary V -12VDS I -6AD R ( at V =-4.5V)DS(ON) GS 40 mohm R ( at V =-2.5V)DS(ON) GS 50 mohm R ( at V =-1.8V)DS(ON) GS 70 mohmGeneral Description Trench Power LV MOSFET technology High Density Cell Design for Low RDS(ON) High Speed switchingApplications Ba
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100