SL2343 MOSFET. Datasheet pdf. Equivalent
Type Designator: SL2343
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 3.1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 14 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 131 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.053 Ohm
Package: SOT23
SL2343 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SL2343 Datasheet (PDF)
sl2343.pdf
SL2343P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.053 at VGS = - 10 V - 4.0 TrenchFET Power MOSFET - 300.086 at VGS = - 4.5 V - 3.1APPLICATIONS Load Switch PA Switch(SOT-23)G 13 DS 2Top ViewOrdering Information: SL2343ABSOLUTE MAXIMUM RATINGS TA = 2
fsl234.pdf
FSL234D, FSL234R4A, 250V, 0.610 Ohm, Rad Hard,SEGR Resistant, N-Channel Power MOSFETsJune 1998Features Description 4A, 250V, rDS(ON) = 0.610 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (S
sl2347.pdf
SL2347 -30V/-5.0A P-Channel MOSFETProduct SummaryFeatures Trench Power LV MOSFET technology VDS RDS(ON) MAX ID MAX High density cell design for Low RDS(ON)45m@-10VD2S1-30V -5.0AD1 High Speed switching70m@-4.5VApplication Battery protectionD Load switch Power managementSD GSOT-23 top view Schematic diagramS47: Device codeS47GS
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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