SL3139T Datasheet and Replacement
Type Designator: SL3139T
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.66 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5.8 nS
Cossⓘ - Output Capacitance: 15 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
Package: SOT523
SL3139T substitution
SL3139T Datasheet (PDF)
sl3139t.pdf
SL3139TP -Channel MOSFETID V(BR)DSS RDS(on)MAX SOT-523 520 m@-4.5V-20V -0.66Am700 @-2.5V950m(TYP)@-1.8V1. GATE 2. SOURCE 3. DRAIN FEATURE APPLICATION Lead Free Product is Acquired Load/Power Switching Surface Mount Package Interfacing, Logic Switching P-Channel Switch with Low RDS(on) Battery Management for Ultra Small Operated a
sl3139k.pdf
SL3139K Equivalent Circuit DP-Channel MOSFET GID V(BR)DSS RDS(on)MAX S 95 1 8 TYP 1. GATE Lead Free Product is Acquired 2. SOURCE 3. DRAIN Surface Mount Package P-Channel Switch with Low RDS(on) Operated at Low Logic Leve
sl3134k.pdf
SL3134KN-Channel Enhancement Mode Field Effect TransistorProduct Summary V 20V DS I 0.75A D R ( at V =4.5V) 350 mohmDS(ON) GS R ( at V =2.5V) 500 mohmDS(ON) GS ESD Protected Up to 3.0KV (HBM)General Description Trench Power LV MOSFET technology High Power and current handing capabilityApplications SOT-523 Load/Power Switching
Datasheet: SL2347 , SL25N10 , SL2P03F , SL2P10A , SL30N02D , SL30N06D , SL3134K , SL3139K , IRFP064N , SL3416 , SL4041 , SL40P05Y , SL4184 , SL4406 , SL4407A , SL4409N , SL4410 .
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