All MOSFET. SL3139T Datasheet

 

SL3139T MOSFET. Datasheet pdf. Equivalent


   Type Designator: SL3139T
   Marking Code: 39K
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1 V
   |Id|ⓘ - Maximum Drain Current: 0.66 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 5.8 nS
   Cossⓘ - Output Capacitance: 15 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
   Package: SOT523

 SL3139T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SL3139T Datasheet (PDF)

 ..1. Size:2406K  slkor
 sl3139t.pdf

SL3139T SL3139T

SL3139TP -Channel MOSFETID V(BR)DSS RDS(on)MAX SOT-523 520 m@-4.5V-20V -0.66Am700 @-2.5V950m(TYP)@-1.8V1. GATE 2. SOURCE 3. DRAIN FEATURE APPLICATION Lead Free Product is Acquired Load/Power Switching Surface Mount Package Interfacing, Logic Switching P-Channel Switch with Low RDS(on) Battery Management for Ultra Small Operated a

 8.1. Size:618K  slkor
 sl3139k.pdf

SL3139T SL3139T

SL3139K Equivalent Circuit DP-Channel MOSFET GID V(BR)DSS RDS(on)MAX S 95 1 8 TYP 1. GATE Lead Free Product is Acquired 2. SOURCE 3. DRAIN Surface Mount Package P-Channel Switch with Low RDS(on) Operated at Low Logic Leve

 9.1. Size:1689K  slkor
 sl3134k.pdf

SL3139T SL3139T

SL3134KN-Channel Enhancement Mode Field Effect TransistorProduct Summary V 20V DS I 0.75A D R ( at V =4.5V) 350 mohmDS(ON) GS R ( at V =2.5V) 500 mohmDS(ON) GS ESD Protected Up to 3.0KV (HBM)General Description Trench Power LV MOSFET technology High Power and current handing capabilityApplications SOT-523 Load/Power Switching

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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