SL3139T Datasheet and Replacement
Type Designator: SL3139T
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id|ⓘ - Maximum Drain Current: 0.66 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 5.8 nS
Cossⓘ - Output Capacitance: 15 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
Package: SOT523
- MOSFET Cross-Reference Search
SL3139T Datasheet (PDF)
sl3139t.pdf

SL3139TP -Channel MOSFETID V(BR)DSS RDS(on)MAX SOT-523 520 m@-4.5V-20V -0.66Am700 @-2.5V950m(TYP)@-1.8V1. GATE 2. SOURCE 3. DRAIN FEATURE APPLICATION Lead Free Product is Acquired Load/Power Switching Surface Mount Package Interfacing, Logic Switching P-Channel Switch with Low RDS(on) Battery Management for Ultra Small Operated a
sl3139k.pdf

SL3139K Equivalent Circuit DP-Channel MOSFET GID V(BR)DSS RDS(on)MAX S 95 1 8 TYP 1. GATE Lead Free Product is Acquired 2. SOURCE 3. DRAIN Surface Mount Package P-Channel Switch with Low RDS(on) Operated at Low Logic Leve
sl3134k.pdf

SL3134KN-Channel Enhancement Mode Field Effect TransistorProduct Summary V 20V DS I 0.75A D R ( at V =4.5V) 350 mohmDS(ON) GS R ( at V =2.5V) 500 mohmDS(ON) GS ESD Protected Up to 3.0KV (HBM)General Description Trench Power LV MOSFET technology High Power and current handing capabilityApplications SOT-523 Load/Power Switching
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: 2SK241 | 1N70Z | AP30H80Q | R6006JND3 | 2P829G9 | HSCE2631 | FQP9N15
Keywords - SL3139T MOSFET datasheet
SL3139T cross reference
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History: 2SK241 | 1N70Z | AP30H80Q | R6006JND3 | 2P829G9 | HSCE2631 | FQP9N15



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