SL4406 Datasheet and Replacement
Type Designator: SL4406
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 160(max) pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: SOP8
SL4406 substitution
SL4406 Datasheet (PDF)
sl4406.pdf

SL4406N-Channel MOSFETSOP-8 Features VDS (V) = 30V ID = 15 A (VGS = 10V) RDS(ON) 7.5m (VGS = 10V)1.50 0.15 RDS(ON) 11.0m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDG S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gate-Source Voltage VGS 2
sl4409n.pdf

SL4409NN-Channel MOSFET IDV(BR)DSS RDS(on)MAX SOT-323 58m@4.5V20 V 2.3A@2.5V86m1. GATE 2. SOURCE 3. DRAIN APPLICATION FEATURE Load Switch for Portable Devices TrenchFET Power MOSFET DC/DC Converter Equivalent Circuit MARKINGMaximum ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitDrain-Source Voltage VDS 20V Gate-Source
sl4407a.pdf

SL4407AP-Channel Enhancement Mode Field Effect TransistorProduct Summary V -30VDS ID-12A RDS(ON)( at VGS=-20V)11mohm R ( at V =-10V)DS(ON) GS13mohm RDS(ON)( at VGS=-6V)17mohm R ( at V =-4.5V)DS(ON) GS27mohmGeneral Description Trench Power LV MOSFET technology High density cell design for Low RDS(ON) High Spee
Datasheet: SL30N06D , SL3134K , SL3139K , SL3139T , SL3416 , SL4041 , SL40P05Y , SL4184 , IRF740 , SL4407A , SL4409N , SL4410 , SL4421 , SL4435A , SL4449A , SL4459 , SL4614 .
History: AP4543GEH-HF | TSM75N75CZ | AOE6932 | PDN2309S | NCE60N1K0I
Keywords - SL4406 MOSFET datasheet
SL4406 cross reference
SL4406 equivalent finder
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History: AP4543GEH-HF | TSM75N75CZ | AOE6932 | PDN2309S | NCE60N1K0I



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