SL4407A MOSFET. Datasheet pdf. Equivalent
Type Designator: SL4407A
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 3.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.8 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Total Gate Charge (Qg): 40.1 nC
Rise Time (tr): 19 nS
Drain-Source Capacitance (Cd): 308 pF
Maximum Drain-Source On-State Resistance (Rds): 0.011 Ohm
Package: SOP8
SL4407A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SL4407A Datasheet (PDF)
sl4407a.pdf
SL4407AP-Channel Enhancement Mode Field Effect TransistorProduct Summary V -30VDS ID-12A RDS(ON)( at VGS=-20V)11mohm R ( at V =-10V)DS(ON) GS13mohm RDS(ON)( at VGS=-6V)17mohm R ( at V =-4.5V)DS(ON) GS27mohmGeneral Description Trench Power LV MOSFET technology High density cell design for Low RDS(ON) High Spee
sl4409n.pdf
SL4409NN-Channel MOSFET IDV(BR)DSS RDS(on)MAX SOT-323 58m@4.5V20 V 2.3A@2.5V86m1. GATE 2. SOURCE 3. DRAIN APPLICATION FEATURE Load Switch for Portable Devices TrenchFET Power MOSFET DC/DC Converter Equivalent Circuit MARKINGMaximum ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitDrain-Source Voltage VDS 20V Gate-Source
sl4406.pdf
SL4406N-Channel MOSFETSOP-8 Features VDS (V) = 30V ID = 15 A (VGS = 10V) RDS(ON) 7.5m (VGS = 10V)1.50 0.15 RDS(ON) 11.0m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDG S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gate-Source Voltage VGS 2
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
