SL4435A MOSFET. Datasheet pdf. Equivalent
Type Designator: SL4435A
Marking Code: 4435
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 10.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 29 nC
trⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 180 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: SOP8
SL4435A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SL4435A Datasheet (PDF)
..1. Size:821K slkor
sl4435a.pdf
sl4435a.pdf
SL4435A -30V/-10A P-Channel MOSFETFeaturesProduct Summary Trench Power LV MOSFET technologyVDS RDS(ON) MAX ID MAX High density cell design for Low RDS(ON)18m@10VD2S1-30V -10.5A High Speed switching D130m@4.5VDDDApplicationD Battery protection Power managementS Load switchSSGD D D DSOP-8 top view Schematic diagram4435: Dev
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
