SL4459 Datasheet and Replacement
Type Designator: SL4459
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 6.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 420 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm
Package: SOP8
- MOSFET Cross-Reference Search
SL4459 Datasheet (PDF)
sl4459.pdf

SL4459P-Channel MOSFETDESCRIPTIONThe SL4459 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gatevoltages as low as 4.5V. This device is suitable for use as aload switch or in PWM applications.GENERAL FEATURES VDS = -30V,ID = -6.5ARDS(ON)
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Keywords - SL4459 MOSFET datasheet
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History: GSM3030 | IRF6612



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