All MOSFET. SL50N06I Datasheet

 

SL50N06I Datasheet and Replacement


   Type Designator: SL50N06I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 104 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO251
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SL50N06I Datasheet (PDF)

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 sl50n06d sl50n06i.pdf pdf_icon

SL50N06I

SL50N06D/SL50N06I N-Channel 60-V(D-S) Power MOSFETV(BR)DSS RDS(on)MAX ID Equivalent Circuit:60 V 20m@ 10 V50AGeneral Description:2 SL50N06D The high voltage MOSFET uses an advanced termination 3scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition , this advanced MOSFET is designed to withstand high energy in avalanche

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 sl50n02d.pdf pdf_icon

SL50N06I

SL50N02D 20V/50A N-Channel MOSFETProduct SummaryFeatures High density cell design for ultra low Rdson VDS RDS(ON) MAX ID MAX Fully characterized avalanche voltage and 10m@4.5VD220V S1 50AcurrentD113m@2.5V Good stability and uniformity with high EASD Excellent package for good heat dissipationApplication Load switching Hard switched and high

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History: JCS4N60RB | HLML6401 | TK4A80E | MPVA4N70F | CS16N60P | HCS65R450S | AP85T03GH-HF

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