SL50N06I MOSFET Datasheet: N-Ch, 60V, 50A. Full specification with pinout and replacement list

SL50N06I Specs and Replacement

Type Designator: SL50N06I

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 136 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 104 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: TO251

SL50N06I substitution

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SL50N06I datasheet

..1. Size:955K slkor
sl50n06d sl50n06i.pdf pdf_icon

SL50N06D/SL50N06I N-Channel 60-V(D-S) Power MOSFET V(BR)DSS RDS(on)MAX ID Equivalent Circuit 60 V 20m @ 10 V 50A General Description 2 SL50N06D The high voltage MOSFET uses an advanced termination 3 scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition , this advanced MOSFET is designed to withstand high energy in avalanche ... See More ⇒

8.1. Size:822K slkor
sl50n02d.pdf pdf_icon

SL50N02D 20V/50A N-Channel MOSFET Product Summary Features High density cell design for ultra low Rdson VDS RDS(ON) MAX ID MAX Fully characterized avalanche voltage and 10m @4.5V D2 20V S1 50A current D1 13m @2.5V Good stability and uniformity with high EAS D Excellent package for good heat dissipation Application Load switching Hard switched and high ... See More ⇒

Detailed specifications: SL4822A, SL4N150B, SL4N150F, SL4N150K, SL4N150P, SL4N150T, SL50N02D, SL50N06D, AON6414A, SL50P06D, SL5N100, SL5N100D, SL5N100F, SL5N100K, SL5N100P, SL5N50D, SL607B