SL5N100P Specs and Replacement
Type Designator: SL5N100P
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18.5 nS
Cossⓘ - Output Capacitance: 45 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.2 Ohm
Package: TO3PH
SL5N100P substitution
- MOSFET ⓘ Cross-Reference Search
SL5N100P datasheet
sl5n100p sl5n100f sl5n100 sl5n100k sl5n100d.pdf
SL5N100 N-channel 1000V 3-5 5A General features Type VDSS(@Tjmax) ID RDS(on) SL5N100P 1000 V ... See More ⇒
Detailed specifications: SL50N02D, SL50N06D, SL50N06I, SL50P06D, SL5N100, SL5N100D, SL5N100F, SL5N100K, IRFP250N, SL5N50D, SL607B, SL6244, SL6800C, SL80N03, SL8820, SL8N100, SL8N100F
Keywords - SL5N100P MOSFET specs
SL5N100P cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: IRLR7821CPBF | ZXMN6A08E6TA | IRHQ57110
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