SL5N100P Datasheet and Replacement
Type Designator: SL5N100P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 18.5 nS
Cossⓘ - Output Capacitance: 45 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.2 Ohm
Package: TO3PH
SL5N100P substitution
SL5N100P Datasheet (PDF)
sl5n100p sl5n100f sl5n100 sl5n100k sl5n100d.pdf
SL5N100N-channel 1000V3-5 5AGeneral featuresType VDSS(@Tjmax) IDRDS(on)SL5N100P 1000 V
Datasheet: SL50N02D , SL50N06D , SL50N06I , SL50P06D , SL5N100 , SL5N100D , SL5N100F , SL5N100K , AON7408 , SL5N50D , SL607B , SL6244 , SL6800C , SL80N03 , SL8820 , SL8N100 , SL8N100F .
Keywords - SL5N100P MOSFET datasheet
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History: BRFL7N65S | GSM4946W
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