All MOSFET. SL607B Datasheet

 

SL607B MOSFET. Datasheet pdf. Equivalent


   Type Designator: SL607B
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5.2 nC
   trⓘ - Rise Time: 2.5 nS
   Cossⓘ - Output Capacitance: 92 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TO252-4L

 SL607B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SL607B Datasheet (PDF)

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 sl607b.pdf

SL607B SL607B

SL607BN-Channel and P-Channel Complementary Power MOSFETProduct Summary NMOS V 30V DS I 12A D R ( at VGS=10V) 30mohm DS(ON) R ( at VGS=4.5V)DS(ON) 45mohm PMOS V -30VDS ID -8A R ( at VGS=-10V)DS(ON)55mohm R ( at VGS=-4.5V)DS(ON) 80mohm 100% V TestedDSGeneral Description Trench Power LV MOSFET technol

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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