SL607B Specs and Replacement
Type Designator: SL607B
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.5 nS
Cossⓘ - Output Capacitance: 92 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TO252-4L
SL607B substitution
- MOSFET ⓘ Cross-Reference Search
SL607B datasheet
sl607b.pdf
SL607B N-Channel and P-Channel Complementary Power MOSFET Product Summary NMOS V 30V DS I 12A D R ( at VGS=10V) 30mohm DS(ON) R ( at VGS=4.5V) DS(ON) 45mohm PMOS V -30V DS I D -8A R ( at VGS=-10V) DS(ON) 55mohm R ( at VGS=-4.5V) DS(ON) 80mohm 100% V Tested DS General Description Trench Power LV MOSFET technol... See More ⇒
Detailed specifications: SL50N06I, SL50P06D, SL5N100, SL5N100D, SL5N100F, SL5N100K, SL5N100P, SL5N50D, IRF9540, SL6244, SL6800C, SL80N03, SL8820, SL8N100, SL8N100F, SL8N100H, SL8N100K
Keywords - SL607B MOSFET specs
SL607B cross reference
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: 4N60KL-TMS4-T
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