All MOSFET. SL607B Datasheet

 

SL607B Datasheet and Replacement


   Type Designator: SL607B
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.5 nS
   Cossⓘ - Output Capacitance: 92 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TO252-4L
 

 SL607B substitution

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SL607B Datasheet (PDF)

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SL607B

SL607BN-Channel and P-Channel Complementary Power MOSFETProduct Summary NMOS V 30V DS I 12A D R ( at VGS=10V) 30mohm DS(ON) R ( at VGS=4.5V)DS(ON) 45mohm PMOS V -30VDS ID -8A R ( at VGS=-10V)DS(ON)55mohm R ( at VGS=-4.5V)DS(ON) 80mohm 100% V TestedDSGeneral Description Trench Power LV MOSFET technol

Datasheet: SL50N06I , SL50P06D , SL5N100 , SL5N100D , SL5N100F , SL5N100K , SL5N100P , SL5N50D , K3569 , SL6244 , SL6800C , SL80N03 , SL8820 , SL8N100 , SL8N100F , SL8N100H , SL8N100K .

History: P1060ETFNA | WMK90R260S

Keywords - SL607B MOSFET datasheet

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