SL8N100 Datasheet and Replacement
Type Designator: SL8N100
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 167 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 67 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
Package: TO220
SL8N100 substitution
SL8N100 Datasheet (PDF)
sl8n100 sl8n100h sl8n100k sl8n100f sl8n100t.pdf
SL8N100 SeriesFeatures Low gate charge Low C (typ 9pF)rss Fast switchin 100% avalanche tested Improved dv/dt capability RoHS productApplications High frequency switching mode power supply Electronic ballast UPSAbsolute Ratings (Tc=25)Parameter Symbol Value UnitDrain-Source Voltage V 1000 VDSS8 AI T=25DDrain Current-continu
Datasheet: SL5N100K , SL5N100P , SL5N50D , SL607B , SL6244 , SL6800C , SL80N03 , SL8820 , IRF9540N , SL8N100F , SL8N100H , SL8N100K , SL8N100T , SL90N03R , SL90N20P , SL90P03G , SL9435A .
Keywords - SL8N100 MOSFET datasheet
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
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