All MOSFET. SL8N100 Datasheet

 

SL8N100 Datasheet and Replacement


   Type Designator: SL8N100
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 167 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 67 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
   Package: TO220
 

 SL8N100 substitution

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SL8N100 Datasheet (PDF)

 ..1. Size:4070K  slkor
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SL8N100

SL8N100 SeriesFeatures Low gate charge Low C (typ 9pF)rss Fast switchin 100% avalanche tested Improved dv/dt capability RoHS productApplications High frequency switching mode power supply Electronic ballast UPSAbsolute Ratings (Tc=25)Parameter Symbol Value UnitDrain-Source Voltage V 1000 VDSS8 AI T=25DDrain Current-continu

Datasheet: SL5N100K , SL5N100P , SL5N50D , SL607B , SL6244 , SL6800C , SL80N03 , SL8820 , IRF1010E , SL8N100F , SL8N100H , SL8N100K , SL8N100T , SL90N03R , SL90N20P , SL90P03G , SL9435A .

History: PTA08N100

Keywords - SL8N100 MOSFET datasheet

 SL8N100 cross reference
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