SL8N100T Specs and Replacement
Type Designator: SL8N100T
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 167 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 67 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
Package: TO247
SL8N100T substitution
- MOSFET ⓘ Cross-Reference Search
SL8N100T datasheet
sl8n100 sl8n100h sl8n100k sl8n100f sl8n100t.pdf
SL8N100 Series Features Low gate charge Low C (typ 9pF) rss Fast switchin 100% avalanche tested Improved dv/dt capability RoHS product Applications High frequency switching mode power supply Electronic ballast UPS Absolute Ratings (Tc=25 ) Parameter Symbol Value Unit Drain-Source Voltage V 1000 V DSS 8 A I T=25 D Drain Current-continu... See More ⇒
Detailed specifications: SL6244, SL6800C, SL80N03, SL8820, SL8N100, SL8N100F, SL8N100H, SL8N100K, K3569, SL90N03R, SL90N20P, SL90P03G, SL9435A, SL9926A, SL9945, SL9968, SL9N150T
Keywords - SL8N100T MOSFET specs
SL8N100T cross reference
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SL8N100T replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: SI5948DU | EMB20P03G
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