All MOSFET. SL8N100T Datasheet

 

SL8N100T Datasheet and Replacement


   Type Designator: SL8N100T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 167 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 67 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
   Package: TO247
 

 SL8N100T substitution

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SL8N100T Datasheet (PDF)

 ..1. Size:4070K  slkor
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SL8N100T

SL8N100 SeriesFeatures Low gate charge Low C (typ 9pF)rss Fast switchin 100% avalanche tested Improved dv/dt capability RoHS productApplications High frequency switching mode power supply Electronic ballast UPSAbsolute Ratings (Tc=25)Parameter Symbol Value UnitDrain-Source Voltage V 1000 VDSS8 AI T=25DDrain Current-continu

Datasheet: SL6244 , SL6800C , SL80N03 , SL8820 , SL8N100 , SL8N100F , SL8N100H , SL8N100K , SPP20N60C3 , SL90N03R , SL90N20P , SL90P03G , SL9435A , SL9926A , SL9945 , SL9968 , SL9N150T .

History: IRF620PBF | CS12N06AE-G | WMB128N10T2 | IXFA3N120 | WSP10N10 | HM2305 | STP15NK50Z

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