SL90N03R MOSFET. Datasheet pdf. Equivalent
Type Designator: SL90N03R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 90 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 90 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 42 nC
trⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 320 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: PDFN5X6-8L
SL90N03R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SL90N03R Datasheet (PDF)
sl90n03r.pdf
SL90N03RDescription This Power MOSFET is produced using advanced TRENCH technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Features PDFN5*6-8L V =30VI =90A DS D R = 4.2m @V =10V DS ON TYP GS R =
sl90n20p.pdf
SL90N20P220V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Absolute Maximum Ratings TC = 25C, unless otherwise noted Value Symbol Unit Parameter TO-247 VDSS 220 V Drain-Source Voltage (VG
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