SGB100N025 Datasheet and Replacement
Type Designator: SGB100N025
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 175 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 180 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 1600 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
Package: TO263
- MOSFET Cross-Reference Search
SGB100N025 Datasheet (PDF)
sgb100n025 sgp100n025 sgw100n025.pdf
SUPER-SEMISUPER-MOSFETSuper Gate Metal Oxide Semiconductor Field Effect Transistor100V Super Gate Power MOSFETSG*100N025Rev. 1.1Jul. 2021www.supersemi.com.cnSGB100N025/SGP100N025/SGW100N025100V N-Channel MOSFETDescription Features VDS 100VThe SG-MOSFET uses advanced trench MOSFET technology ID (at Vgs=10V) 180Athat is uniquely optimized to provide the most ef
sgb100n042 sgp100n042.pdf
SUPER-SEMISUPER-MOSFETSuper Gate Metal Oxide Semiconductor Field Effect Transistor100V Super Gate Power MOSFETSG*100N042Rev. 0.9Jul. 2021www.supersemi.com.cnSGB100N042/SGP100N042100V N-Channel MOSFETDescription Features VDS 100VThe SG-MOSFET uses advanced trench MOSFET technology ID (at Vgs=10V) 120Athat is uniquely optimized to provide the most efficient hig
sgb10n60a .pdf
SGB10N60A Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses G Short circuit withstand time 10 s E Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switc
sgb10n60a.pdf
SGB10N60A Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses G Short circuit withstand time 10 s E Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switc
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: 1N60L-AB3-R | 17P10L-TA3-T | 9N70 | 2N65KL-TN3-R | SVF18N65PN | IXFA16N50P | IRF6619
Keywords - SGB100N025 MOSFET datasheet
SGB100N025 cross reference
SGB100N025 equivalent finder
SGB100N025 lookup
SGB100N025 substitution
SGB100N025 replacement
History: 1N60L-AB3-R | 17P10L-TA3-T | 9N70 | 2N65KL-TN3-R | SVF18N65PN | IXFA16N50P | IRF6619
LIST
Last Update
MOSFET: ZM019N03N | DH116N08I | DH116N08F | DH116N08E | DH116N08D | DH116N08B | DH116N08 | DH10H037R | DH10H035R | DH100P40 | DH100P35I | DH100P35F | DH100P35E | DH100P35D | DH100P35B | DH100P35
Popular searches
d965 | mje15031 | irfp150n | mj15025 | mp1620 | kta1381 | bf494 | 2sc1885