SGB100N025 - описание и поиск аналогов

 

SGB100N025. Аналоги и основные параметры

Наименование производителя: SGB100N025

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 175 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 180 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 27 ns

Cossⓘ - Выходная емкость: 1600 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0025 Ohm

Тип корпуса: TO263

Аналог (замена) для SGB100N025

- подборⓘ MOSFET транзистора по параметрам

 

SGB100N025 даташит

 ..1. Size:708K  cn super semi
 sgb100n025 sgp100n025 sgw100n025.pdf pdf_icon

SGB100N025

SUPER-SEMI SUPER-MOSFET Super Gate Metal Oxide Semiconductor Field Effect Transistor 100V Super Gate Power MOSFET SG*100N025 Rev. 1.1 Jul. 2021 www.supersemi.com.cn SGB100N025/SGP100N025/SGW100N025 100V N-Channel MOSFET Description Features VDS 100V The SG-MOSFET uses advanced trench MOSFET technology ID (at Vgs=10V) 180A that is uniquely optimized to provide the most ef

 6.1. Size:605K  cn super semi
 sgb100n042 sgp100n042.pdf pdf_icon

SGB100N025

SUPER-SEMI SUPER-MOSFET Super Gate Metal Oxide Semiconductor Field Effect Transistor 100V Super Gate Power MOSFET SG*100N042 Rev. 0.9 Jul. 2021 www.supersemi.com.cn SGB100N042/SGP100N042 100V N-Channel MOSFET Description Features VDS 100V The SG-MOSFET uses advanced trench MOSFET technology ID (at Vgs=10V) 120A that is uniquely optimized to provide the most efficient hig

 9.1. Size:789K  infineon
 sgb10n60a .pdf pdf_icon

SGB100N025

SGB10N60A Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses G Short circuit withstand time 10 s E Designed for - Motor controls - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switc

 9.2. Size:785K  infineon
 sgb10n60a.pdf pdf_icon

SGB100N025

SGB10N60A Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses G Short circuit withstand time 10 s E Designed for - Motor controls - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switc

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... SL9435A , SL9926A , SL9945 , SL9968 , SL9N150T , SLP170C04D , SLP240C03D , SGB080N055 , AON6380 , SGB100N042 , SGL100N025 , SGP080N055 , SGP100N025 , SGP100N042 , SGT080N055 , SGW080N055 , SGW100N025 .

History: AP80WN2K5I | 2SJ297L | AO4842-MS | LSE65R099GF | H8205 | 2SJ324-Z | R6504KNX

 

 

 

 

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