Справочник MOSFET. SGB100N025

 

SGB100N025 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: SGB100N025
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 175 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 180 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 27 ns
   Cossⓘ - Выходная емкость: 1600 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0025 Ohm
   Тип корпуса: TO263
 

 Аналог (замена) для SGB100N025

   - подбор ⓘ MOSFET транзистора по параметрам

 

SGB100N025 Datasheet (PDF)

 ..1. Size:708K  cn super semi
 sgb100n025 sgp100n025 sgw100n025.pdf pdf_icon

SGB100N025

SUPER-SEMISUPER-MOSFETSuper Gate Metal Oxide Semiconductor Field Effect Transistor100V Super Gate Power MOSFETSG*100N025Rev. 1.1Jul. 2021www.supersemi.com.cnSGB100N025/SGP100N025/SGW100N025100V N-Channel MOSFETDescription Features VDS 100VThe SG-MOSFET uses advanced trench MOSFET technology ID (at Vgs=10V) 180Athat is uniquely optimized to provide the most ef

 6.1. Size:605K  cn super semi
 sgb100n042 sgp100n042.pdf pdf_icon

SGB100N025

SUPER-SEMISUPER-MOSFETSuper Gate Metal Oxide Semiconductor Field Effect Transistor100V Super Gate Power MOSFETSG*100N042Rev. 0.9Jul. 2021www.supersemi.com.cnSGB100N042/SGP100N042100V N-Channel MOSFETDescription Features VDS 100VThe SG-MOSFET uses advanced trench MOSFET technology ID (at Vgs=10V) 120Athat is uniquely optimized to provide the most efficient hig

 9.1. Size:789K  infineon
 sgb10n60a .pdf pdf_icon

SGB100N025

SGB10N60A Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses G Short circuit withstand time 10 s E Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switc

 9.2. Size:785K  infineon
 sgb10n60a.pdf pdf_icon

SGB100N025

SGB10N60A Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses G Short circuit withstand time 10 s E Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switc

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... SL9435A , SL9926A , SL9945 , SL9968 , SL9N150T , SLP170C04D , SLP240C03D , SGB080N055 , IRLZ44N , SGB100N042 , SGL100N025 , SGP080N055 , SGP100N025 , SGP100N042 , SGT080N055 , SGW080N055 , SGW100N025 .

History: NCEP10N12AK | RU7N65L | IRC830PBF | NCEP026N10D | IPL65R420E6 | 2SK971

 

 
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