SGL100N025 Datasheet and Replacement
Type Designator: SGL100N025
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 175 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 200 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 1600 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
Package: TOLL
SGL100N025 substitution
SGL100N025 Datasheet (PDF)
sgl100n025.pdf
SUPER-SEMISUPER-MOSFETSuper Gate Metal Oxide Semiconductor Field Effect Transistor100V Super Gate Power MOSFETSGL100N025Rev. 1.0Jan. 2022www.supersemi.com.cnSGL100N025100V N-Channel MOSFETDescription Features VDS 100VThe SG-MOSFET uses advanced trench MOSFET technology ID (at Vgs=10V) 200Athat is uniquely optimized to provide the most efficient high Extr
Datasheet: SL9945 , SL9968 , SL9N150T , SLP170C04D , SLP240C03D , SGB080N055 , SGB100N025 , SGB100N042 , CS150N03A8 , SGP080N055 , SGP100N025 , SGP100N042 , SGT080N055 , SGW080N055 , SGW100N025 , SSA50R060S , SSA65R190S .
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