SGP080N055 Specs and Replacement
Type Designator: SGP080N055
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 179 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 99 nS
Cossⓘ - Output Capacitance: 640 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: TO220
SGP080N055 substitution
- MOSFET ⓘ Cross-Reference Search
SGP080N055 datasheet
sgb080n055 sgp080n055 sgw080n055.pdf
SUPER-SEMI SUPER-MOSFET Super Gate Metal Oxide Semiconductor Field Effect Transistor 80V Super Gate Power MOSFET SG*080N055 Rev. 1.1 Jul. 2021 www.supersemi.com.cn SGB080N055/SGP080N055/SGW080N055 80V N-Channel MOSFET Description Features VDS 80V The SG-MOSFET uses advanced trench MOSFET technology ID (at Vgs=10V) 120A that is uniquely optimized to provide the most effic... See More ⇒
Detailed specifications: SL9968, SL9N150T, SLP170C04D, SLP240C03D, SGB080N055, SGB100N025, SGB100N042, SGL100N025, NCEP15T14, SGP100N025, SGP100N042, SGT080N055, SGW080N055, SGW100N025, SSA50R060S, SSA65R190S, SSB20N60S
Keywords - SGP080N055 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: IXFE180N10 | SWP540
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