All MOSFET. SGW080N055 Datasheet

 

SGW080N055 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SGW080N055
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 179 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 58 nC
   trⓘ - Rise Time: 99 nS
   Cossⓘ - Output Capacitance: 640 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO247

 SGW080N055 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SGW080N055 Datasheet (PDF)

 ..1. Size:918K  cn super semi
 sgb080n055 sgp080n055 sgw080n055.pdf

SGW080N055 SGW080N055

SUPER-SEMISUPER-MOSFETSuper Gate Metal Oxide Semiconductor Field Effect Transistor80V Super Gate Power MOSFETSG*080N055Rev. 1.1Jul. 2021www.supersemi.com.cnSGB080N055/SGP080N055/SGW080N05580V N-Channel MOSFETDescription Features VDS 80VThe SG-MOSFET uses advanced trench MOSFET technology ID (at Vgs=10V) 120Athat is uniquely optimized to provide the most effic

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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