All MOSFET. SGW080N055 Datasheet

 

SGW080N055 Datasheet and Replacement


   Type Designator: SGW080N055
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 179 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 99 nS
   Cossⓘ - Output Capacitance: 640 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO247
 

 SGW080N055 substitution

   - MOSFET ⓘ Cross-Reference Search

 

SGW080N055 Datasheet (PDF)

 ..1. Size:918K  cn super semi
 sgb080n055 sgp080n055 sgw080n055.pdf pdf_icon

SGW080N055

SUPER-SEMISUPER-MOSFETSuper Gate Metal Oxide Semiconductor Field Effect Transistor80V Super Gate Power MOSFETSG*080N055Rev. 1.1Jul. 2021www.supersemi.com.cnSGB080N055/SGP080N055/SGW080N05580V N-Channel MOSFETDescription Features VDS 80VThe SG-MOSFET uses advanced trench MOSFET technology ID (at Vgs=10V) 120Athat is uniquely optimized to provide the most effic

Datasheet: SGB080N055 , SGB100N025 , SGB100N042 , SGL100N025 , SGP080N055 , SGP100N025 , SGP100N042 , SGT080N055 , IRFZ24N , SGW100N025 , SSA50R060S , SSA65R190S , SSB20N60S , SSB60R075SFD2 , SSB60R099S2E , SSB60R099SFD , SSB60R105SFD2 .

History: WMO190N15HG4 | Y2N655S | KF13N60N | IRLI3615P

Keywords - SGW080N055 MOSFET datasheet

 SGW080N055 cross reference
 SGW080N055 equivalent finder
 SGW080N055 lookup
 SGW080N055 substitution
 SGW080N055 replacement

 

 
Back to Top

 


 
.