SSB20N60S PDF and Equivalents Search

 

SSB20N60S Specs and Replacement

Type Designator: SSB20N60S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 151 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 370 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: TO263

SSB20N60S substitution

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SSB20N60S datasheet

 ..1. Size:1827K  cn super semi
 ssf20n60s ssp20n60s ssb20n60s.pdf pdf_icon

SSB20N60S

SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 600V Super Junction Power Transistor SS*20N60S Rev. 1.2 May. 2018 www.supersemi.com.cn September, 2013 SJ-FET SSF20N60S/SSP20N60S/SSB20N60S 600V N-Channel MOSFET Description Features SJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FET is ... See More ⇒

Detailed specifications: SGP080N055, SGP100N025, SGP100N042, SGT080N055, SGW080N055, SGW100N025, SSA50R060S, SSA65R190S, IRFP250, SSB60R075SFD2, SSB60R099S2E, SSB60R099SFD, SSB60R105SFD2, SSB60R140SFD, SSB65R090S2, SSB65R190S, SSB65R190S2

Keywords - SSB20N60S MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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