All MOSFET. SSB20N60S Datasheet

 

SSB20N60S Datasheet and Replacement


   Type Designator: SSB20N60S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 151 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 370 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO263
 

 SSB20N60S substitution

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SSB20N60S Datasheet (PDF)

 ..1. Size:1827K  cn super semi
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SSB20N60S

SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 600V Super Junction Power Transistor SS*20N60S Rev. 1.2 May. 2018 www.supersemi.com.cn September, 2013 SJ-FET SSF20N60S/SSP20N60S/SSB20N60S 600V N-Channel MOSFET Description Features SJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FET is

Datasheet: SGP080N055 , SGP100N025 , SGP100N042 , SGT080N055 , SGW080N055 , SGW100N025 , SSA50R060S , SSA65R190S , STF13NM60N , SSB60R075SFD2 , SSB60R099S2E , SSB60R099SFD , SSB60R105SFD2 , SSB60R140SFD , SSB65R090S2 , SSB65R190S , SSB65R190S2 .

History: 2SK2671 | SKI04033

Keywords - SSB20N60S MOSFET datasheet

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