All MOSFET. SSN60R099SFD Datasheet

 

SSN60R099SFD Datasheet and Replacement


   Type Designator: SSN60R099SFD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 220 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 34 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 107 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
   Package: DFN4L-8X8
 

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SSN60R099SFD Datasheet (PDF)

 ..1. Size:628K  cn super semi
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SSN60R099SFD

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen- With Fast-RecoverySSN60R099SFDRev. 1.0Dec. 2023www.supersemi.com.cnSSN60R099SFD600V N-Channel Super-Junction MOSFET Gen-With Fast-RecoveryDescription FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ

Datasheet: SSF90R650S2 , SSF90R900S2 , SSI60R190S2E , SSI65R190S2 , SSI65R360S2E , SSL60R099SFD , SSL60R190SFD , SSL65R070S2E , AON7410 , SSN65R065SFD3 , SSN65R190S2 , SSN65R1K2S2E , SSN65R360S2 , SSP20N60S , SSP50R140SFD , SSP60R070S2E , SSP60R075SFD2 .

History: SI5948DU | IPI80N06S3-07 | SRT10N230HD56 | HSBA3062 | NCE30P50G | NTTFS5C680NL | KIA30N06B

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