SSP20N60S PDF and Equivalents Search

 

SSP20N60S Specs and Replacement

Type Designator: SSP20N60S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 151 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 370 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: TO220

SSP20N60S substitution

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SSP20N60S datasheet

 ..1. Size:1827K  cn super semi
 ssf20n60s ssp20n60s ssb20n60s.pdf pdf_icon

SSP20N60S

SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 600V Super Junction Power Transistor SS*20N60S Rev. 1.2 May. 2018 www.supersemi.com.cn September, 2013 SJ-FET SSF20N60S/SSP20N60S/SSB20N60S 600V N-Channel MOSFET Description Features SJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FET is ... See More ⇒

Detailed specifications: SSL60R099SFD, SSL60R190SFD, SSL65R070S2E, SSN60R099SFD, SSN65R065SFD3, SSN65R190S2, SSN65R1K2S2E, SSN65R360S2, 12N60, SSP50R140SFD, SSP60R070S2E, SSP60R075SFD2, SSP60R099S2E, SSBG120R080C, SSW120R040C, SSW120R080C, SSZ120R040C

Keywords - SSP20N60S MOSFET specs

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