All MOSFET. SSP20N60S Datasheet

 

SSP20N60S Datasheet and Replacement


   Type Designator: SSP20N60S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 151 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 370 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO220
 

 SSP20N60S substitution

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SSP20N60S Datasheet (PDF)

 ..1. Size:1827K  cn super semi
 ssf20n60s ssp20n60s ssb20n60s.pdf pdf_icon

SSP20N60S

SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 600V Super Junction Power Transistor SS*20N60S Rev. 1.2 May. 2018 www.supersemi.com.cn September, 2013 SJ-FET SSF20N60S/SSP20N60S/SSB20N60S 600V N-Channel MOSFET Description Features SJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FET is

Datasheet: SSL60R099SFD , SSL60R190SFD , SSL65R070S2E , SSN60R099SFD , SSN65R065SFD3 , SSN65R190S2 , SSN65R1K2S2E , SSN65R360S2 , 12N60 , SSP50R140SFD , SSP60R070S2E , SSP60R075SFD2 , SSP60R099S2E , SSBG120R080C , SSW120R040C , SSW120R080C , SSZ120R040C .

History: PSMN005-25D

Keywords - SSP20N60S MOSFET datasheet

 SSP20N60S cross reference
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 SSP20N60S replacement

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