SSW120R040C PDF and Equivalents Search

 

SSW120R040C Specs and Replacement

Type Designator: SSW120R040C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 320 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 22 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 123 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.056 Ohm

Package: TO247

SSW120R040C substitution

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SSW120R040C datasheet

 ..1. Size:818K  cn super semi
 ssw120r040c.pdf pdf_icon

SSW120R040C

SUPER-SEMI SUPER-MOSFET Silicon Carbide Metal Oxide Semiconductor Field Effect Transistor 1200V SiC Power MOSFET SSW120R040C Rev. 0.3 Nov. 2022 www.supersemi.com.cn SSW120R040C 1200V N-Channel SiC Power MOSFET Description Features SiC Power MOSFET is new generation of high voltage MOSFET family that 175 Max. junction temperature is utilizing a revolutionary semiconductor mat... See More ⇒

 6.1. Size:979K  cn super semi
 ssw120r080c.pdf pdf_icon

SSW120R040C

SUPER-SEMI SUPER-MOSFET Silicon Carbide Metal Oxide Semiconductor Field Effect Transistor 1200V SiC Power MOSFET SSW120R080C Rev. 0.3 Apr. 2023 www.supersemi.com.cn SSW120R080C 1200V N-Channel SiC Power MOSFET Description Features SiC Power MOSFET is new generation of high voltage MOSFET family that 175 Max. junction temperature is utilizing a revolutionary semiconductor mat... See More ⇒

Detailed specifications: SSN65R1K2S2E, SSN65R360S2, SSP20N60S, SSP50R140SFD, SSP60R070S2E, SSP60R075SFD2, SSP60R099S2E, SSBG120R080C, CS150N03A8, SSW120R080C, SSZ120R040C, SSZ120R080C, SSP60R099SFD, SSP60R105SFD2, SSP60R130S2, SSP60R140SFD, SSP60R190S2E

Keywords - SSW120R040C MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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