SSZ120R040C MOSFET Datasheet: N-Ch, 1200V, 60A. Full specification with pinout and replacement list

SSZ120R040C Specs and Replacement

Type Designator: SSZ120R040C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 320 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 22 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 123 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.056 Ohm

Package: TO247-4L

SSZ120R040C substitution

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SSZ120R040C datasheet

..1. Size:805K cn super semi
ssz120r040c.pdf pdf_icon

SUPER-SEMI SUPER-MOSFET Silicon Carbide Metal Oxide Semiconductor Field Effect Transistor 1200V SiC Power MOSFET SSZ120R040C Rev. 0.3 Nov. 2022 www.supersemi.com.cn SSZ120R040C 1200V N-Channel SiC Power MOSFET Description Features SiC Power MOSFET is new generation of high voltage MOSFET family that 175 Max. junction temperature is utilizing a revolutionary semiconductor mat... See More ⇒

6.1. Size:985K cn super semi
ssz120r080c.pdf pdf_icon

SUPER-SEMI SUPER-MOSFET Silicon Carbide Metal Oxide Semiconductor Field Effect Transistor 1200V SiC Power MOSFET SSZ120R080C Rev. 0.3 Apr. 2023 www.supersemi.com.cn SSZ120R080C 1200V N-Channel SiC Power MOSFET Description Features SiC Power MOSFET is new generation of high voltage MOSFET family that 175 Max. junction temperature is utilizing a revolutionary semiconductor mat... See More ⇒

Detailed specifications: SSP20N60S, SSP50R140SFD, SSP60R070S2E, SSP60R075SFD2, SSP60R099S2E, SSBG120R080C, SSW120R040C, SSW120R080C, AON7506, SSZ120R080C, SSP60R099SFD, SSP60R105SFD2, SSP60R130S2, SSP60R140SFD, SSP60R190S2E, SSP60R190SFD2, SSP60R260S2E