All MOSFET. SSZ120R040C Datasheet

 

SSZ120R040C Datasheet and Replacement


   Type Designator: SSZ120R040C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 320 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 22 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 123 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.056 Ohm
   Package: TO247-4L
 

 SSZ120R040C substitution

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SSZ120R040C Datasheet (PDF)

 ..1. Size:805K  cn super semi
 ssz120r040c.pdf pdf_icon

SSZ120R040C

SUPER-SEMISUPER-MOSFETSilicon Carbide Metal Oxide Semiconductor Field Effect Transistor1200V SiC Power MOSFETSSZ120R040CRev. 0.3Nov. 2022www.supersemi.com.cnSSZ120R040C1200V N-Channel SiC Power MOSFETDescription FeaturesSiC Power MOSFET is new generation of high voltage MOSFET family that 175 Max. junction temperatureis utilizing a revolutionary semiconductor mat

 6.1. Size:985K  cn super semi
 ssz120r080c.pdf pdf_icon

SSZ120R040C

SUPER-SEMISUPER-MOSFETSilicon Carbide Metal Oxide Semiconductor Field Effect Transistor1200V SiC Power MOSFETSSZ120R080CRev. 0.3Apr. 2023www.supersemi.com.cnSSZ120R080C1200V N-Channel SiC Power MOSFETDescription FeaturesSiC Power MOSFET is new generation of high voltage MOSFET family that 175 Max. junction temperatureis utilizing a revolutionary semiconductor mat

Datasheet: SSP20N60S , SSP50R140SFD , SSP60R070S2E , SSP60R075SFD2 , SSP60R099S2E , SSBG120R080C , SSW120R040C , SSW120R080C , IRFP250 , SSZ120R080C , SSP60R099SFD , SSP60R105SFD2 , SSP60R130S2 , SSP60R140SFD , SSP60R190S2E , SSP60R190SFD2 , SSP60R260S2E .

History: R6046FNZ | WMLL013N08HGS | FS18SM-14A | R6035ENZ | WMK18N50C4 | TK100A06N1 | IRFL4315PBF

Keywords - SSZ120R040C MOSFET datasheet

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