SSZ120R040C Datasheet and Replacement
Type Designator: SSZ120R040C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 320 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 22 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 123 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.056 Ohm
Package: TO247-4L
SSZ120R040C substitution
SSZ120R040C Datasheet (PDF)
ssz120r040c.pdf
SUPER-SEMISUPER-MOSFETSilicon Carbide Metal Oxide Semiconductor Field Effect Transistor1200V SiC Power MOSFETSSZ120R040CRev. 0.3Nov. 2022www.supersemi.com.cnSSZ120R040C1200V N-Channel SiC Power MOSFETDescription FeaturesSiC Power MOSFET is new generation of high voltage MOSFET family that 175 Max. junction temperatureis utilizing a revolutionary semiconductor mat
ssz120r080c.pdf
SUPER-SEMISUPER-MOSFETSilicon Carbide Metal Oxide Semiconductor Field Effect Transistor1200V SiC Power MOSFETSSZ120R080CRev. 0.3Apr. 2023www.supersemi.com.cnSSZ120R080C1200V N-Channel SiC Power MOSFETDescription FeaturesSiC Power MOSFET is new generation of high voltage MOSFET family that 175 Max. junction temperatureis utilizing a revolutionary semiconductor mat
Datasheet: SSP20N60S , SSP50R140SFD , SSP60R070S2E , SSP60R075SFD2 , SSP60R099S2E , SSBG120R080C , SSW120R040C , SSW120R080C , IRFP250 , SSZ120R080C , SSP60R099SFD , SSP60R105SFD2 , SSP60R130S2 , SSP60R140SFD , SSP60R190S2E , SSP60R190SFD2 , SSP60R260S2E .
History: SFP120N120B | HUF75852G3F085 | JCS10N65ST | IRFL4315PBF | FHP1404A
Keywords - SSZ120R040C MOSFET datasheet
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History: SFP120N120B | HUF75852G3F085 | JCS10N65ST | IRFL4315PBF | FHP1404A
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