All MOSFET. FDS4685 Datasheet

 

FDS4685 Datasheet and Replacement


   Type Designator: FDS4685
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 8.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 256 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: SO-8
      - MOSFET Cross-Reference Search

 

FDS4685 Datasheet (PDF)

 ..1. Size:506K  fairchild semi
fds4685.pdf pdf_icon

FDS4685

June 2005FDS468540V P-Channel PowerTrench MOSFETFeatures Applications 8.2 A, 40 V RDS(ON) = 0.027 @ VGS = 10 V Power managementRDS(ON) = 0.035 @ VGS = 4.5 V Load switch Fast switching speed Battery protection High performance trench technology for extremely low RDS(ON) General Description High power and current handling capabi

 ..2. Size:594K  onsemi
fds4685.pdf pdf_icon

FDS4685

FDS468540V P-Channel PowerTrench MOSFETApplicationsFeatures Power management 8.2 A, 40 V RDS(ON) = 0.027 @ VGS = 10 V Load switchRDS(ON) = 0.035 @ VGS = 4.5 V Battery protection Fast switching speed High performance trench technology for extremely lowGeneral DescriptionRDS(ON) High power and current handling capability This P-

 0.1. Size:840K  cn vbsemi
fds4685-nl.pdf pdf_icon

FDS4685

FDS4685-NLwww.VBsemi.twP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.010 at VGS = - 10 V - 16.1 100 % Rg Tested- 40 33 nC0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Load Switch POLSO-8GSD

 9.1. Size:73K  fairchild semi
fds4675.pdf pdf_icon

FDS4685

February 2001 FDS4675 40V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 11 A, 40 V R = 0.013 @ V = 10 V DS(ON) GSFairchild Semiconductors advanced PowerTrench R = 0.017 @ V = 4.5 V DS(ON) GSprocess. It has been optimized for power management applications requiring a wide range of g

Datasheet: STB458D , STB440S , FDS4559 , STB438S , FDS4559F085 , STB438A , FDS4672A , FDS4675F085 , AO3401 , FDS4897AC , STB434S , FDS4897C , STB432S , FDS4935A , FDS4935BZ , FDS5351 , FDS5670 .

History: HM18N03D | AP85U03GM-HF | NILMS4501NR2G | SI2308 | FQA9N50 | SI7788DP | UTT150N06

Keywords - FDS4685 MOSFET datasheet

 FDS4685 cross reference
 FDS4685 equivalent finder
 FDS4685 lookup
 FDS4685 substitution
 FDS4685 replacement

 

 
Back to Top

 


 
.