FDS4685 PDF and Equivalents Search

 

FDS4685 Specs and Replacement

Type Designator: FDS4685

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 256 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm

Package: SO-8

FDS4685 substitution

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FDS4685 datasheet

 ..1. Size:506K  fairchild semi
fds4685.pdf pdf_icon

FDS4685

June 2005 FDS4685 40V P-Channel PowerTrench MOSFET Features Applications 8.2 A, 40 V RDS(ON) = 0.027 @ VGS = 10 V Power management RDS(ON) = 0.035 @ VGS = 4.5 V Load switch Fast switching speed Battery protection High performance trench technology for extremely low RDS(ON) General Description High power and current handling capabi... See More ⇒

 ..2. Size:594K  onsemi
fds4685.pdf pdf_icon

FDS4685

FDS4685 40V P-Channel PowerTrench MOSFET Applications Features Power management 8.2 A, 40 V RDS(ON) = 0.027 @ VGS = 10 V Load switch RDS(ON) = 0.035 @ VGS = 4.5 V Battery protection Fast switching speed High performance trench technology for extremely low General Description RDS(ON) High power and current handling capability This P-... See More ⇒

 0.1. Size:840K  cn vbsemi
fds4685-nl.pdf pdf_icon

FDS4685

FDS4685-NL www.VBsemi.tw P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.010 at VGS = - 10 V - 16.1 100 % Rg Tested - 40 33 nC 0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS S Load Switch POL SO-8 G SD ... See More ⇒

 9.1. Size:73K  fairchild semi
fds4675.pdf pdf_icon

FDS4685

February 2001 FDS4675 40V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 11 A, 40 V R = 0.013 @ V = 10 V DS(ON) GS Fairchild Semiconductor s advanced PowerTrench R = 0.017 @ V = 4.5 V DS(ON) GS process. It has been optimized for power management applications requiring a wide range of g... See More ⇒

Detailed specifications: STB458D, STB440S, FDS4559, STB438S, FDS4559F085, STB438A, FDS4672A, FDS4675F085, AO3400A, FDS4897AC, STB434S, FDS4897C, STB432S, FDS4935A, FDS4935BZ, FDS5351, FDS5670

Keywords - FDS4685 MOSFET specs

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