FDS4685 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FDS4685
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 2.5 W
Предельно допустимое напряжение сток-исток |Uds|: 40 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 8.2 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 19 nC
Время нарастания (tr): 11 ns
Выходная емкость (Cd): 256 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.027 Ohm
Тип корпуса: SO-8
FDS4685 Datasheet (PDF)
fds4685.pdf
June 2005FDS468540V P-Channel PowerTrench MOSFETFeatures Applications 8.2 A, 40 V RDS(ON) = 0.027 @ VGS = 10 V Power managementRDS(ON) = 0.035 @ VGS = 4.5 V Load switch Fast switching speed Battery protection High performance trench technology for extremely low RDS(ON) General Description High power and current handling capabi
fds4685.pdf
FDS468540V P-Channel PowerTrench MOSFETApplicationsFeatures Power management 8.2 A, 40 V RDS(ON) = 0.027 @ VGS = 10 V Load switchRDS(ON) = 0.035 @ VGS = 4.5 V Battery protection Fast switching speed High performance trench technology for extremely lowGeneral DescriptionRDS(ON) High power and current handling capability This P-
fds4685-nl.pdf
FDS4685-NLwww.VBsemi.twP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.010 at VGS = - 10 V - 16.1 100 % Rg Tested- 40 33 nC0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Load Switch POLSO-8GSD
fds4675.pdf
February 2001 FDS4675 40V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 11 A, 40 V R = 0.013 @ V = 10 V DS(ON) GSFairchild Semiconductors advanced PowerTrench R = 0.017 @ V = 4.5 V DS(ON) GSprocess. It has been optimized for power management applications requiring a wide range of g
fds4672a.pdf
February 2007tmFDS4672A 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 11 A, 40 V. RDS(ON) = 13 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional High performance trench technology for extremely switching PWM controllers. It has been op
fds4675 f085.pdf
February 2010tmFDS4675_F085 40V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 11 A, 40 V R = 0.013 @ V = 10 V DS(ON) GSFairchild Semiconductors advanced PowerTrench R = 0.017 @ V = 4.5 V DS(ON) GSprocess. It has been optimized for power management applications requiring a wide ra
fds4672a.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fds4672a.pdf
FDS4672Awww.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.012 at VGS = 10 V TrenchFET Power MOSFET1240 15 nC 100 % Rg Tested0.012 at VGS = 4.5 V 9 100 % UIS Tested Compliant to RoHS directive 2002/95/ECAPPLICATIONS Synchronous Rectific
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