Справочник MOSFET. FDS4685

 

FDS4685 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDS4685
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 8.2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 11 ns
   Cossⓘ - Выходная емкость: 256 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.027 Ohm
   Тип корпуса: SO-8

 Аналог (замена) для FDS4685

 

 

FDS4685 Datasheet (PDF)

 ..1. Size:506K  fairchild semi
fds4685.pdf

FDS4685 FDS4685

June 2005FDS468540V P-Channel PowerTrench MOSFETFeatures Applications 8.2 A, 40 V RDS(ON) = 0.027 @ VGS = 10 V Power managementRDS(ON) = 0.035 @ VGS = 4.5 V Load switch Fast switching speed Battery protection High performance trench technology for extremely low RDS(ON) General Description High power and current handling capabi

 ..2. Size:594K  onsemi
fds4685.pdf

FDS4685 FDS4685

FDS468540V P-Channel PowerTrench MOSFETApplicationsFeatures Power management 8.2 A, 40 V RDS(ON) = 0.027 @ VGS = 10 V Load switchRDS(ON) = 0.035 @ VGS = 4.5 V Battery protection Fast switching speed High performance trench technology for extremely lowGeneral DescriptionRDS(ON) High power and current handling capability This P-

 0.1. Size:840K  cn vbsemi
fds4685-nl.pdf

FDS4685 FDS4685

FDS4685-NLwww.VBsemi.twP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.010 at VGS = - 10 V - 16.1 100 % Rg Tested- 40 33 nC0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Load Switch POLSO-8GSD

 9.1. Size:73K  fairchild semi
fds4675.pdf

FDS4685 FDS4685

February 2001 FDS4675 40V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 11 A, 40 V R = 0.013 @ V = 10 V DS(ON) GSFairchild Semiconductors advanced PowerTrench R = 0.017 @ V = 4.5 V DS(ON) GSprocess. It has been optimized for power management applications requiring a wide range of g

 9.2. Size:439K  fairchild semi
fds4672a.pdf

FDS4685 FDS4685

February 2007tmFDS4672A 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 11 A, 40 V. RDS(ON) = 13 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional High performance trench technology for extremely switching PWM controllers. It has been op

 9.3. Size:310K  fairchild semi
fds4675 f085.pdf

FDS4685 FDS4685

February 2010tmFDS4675_F085 40V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 11 A, 40 V R = 0.013 @ V = 10 V DS(ON) GSFairchild Semiconductors advanced PowerTrench R = 0.017 @ V = 4.5 V DS(ON) GSprocess. It has been optimized for power management applications requiring a wide ra

 9.4. Size:289K  onsemi
fds4672a.pdf

FDS4685 FDS4685

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.5. Size:1505K  cn vbsemi
fds4672a.pdf

FDS4685 FDS4685

FDS4672Awww.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.012 at VGS = 10 V TrenchFET Power MOSFET1240 15 nC 100 % Rg Tested0.012 at VGS = 4.5 V 9 100 % UIS Tested Compliant to RoHS directive 2002/95/ECAPPLICATIONS Synchronous Rectific

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