SST80R380S2 Datasheet and Replacement
Type Designator: SST80R380S2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 154 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 14 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 42 nS
Cossⓘ - Output Capacitance: 40 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.44 Ohm
Package: TO252
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SST80R380S2 Datasheet (PDF)
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SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor800V Super Junction Power MOSFET Gen-SS*80R380S2Rev. 1.2Mar. 2022www.supersemi.com.cnSSF80R380S2/SSP80R380S2/SST80R380S2800V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizin
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SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor800V Super Junction Power MOSFETSS*80R1K3SRev. 2.1Jun. 2022www.supersemi.com.cnSeptember, 2013SJ-FETSSF80R1K3S/SSP80R1K3S/SST80R1K3S/SSU80R1K3S800V N-Channel MOSFETDescription FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizi
ssf80r850s2 ssp80r850s2 sst80r850s2.pdf
SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor800V Super Junction Power MOSFET Gen-SS*80R850S2Rev. 1.2May. 2022www.supersemi.com.cnSSF80R850S2/SSP80R850S2/SST80R850S2800V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizin
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: UTM4052G-TN4-T | SM4186T9RL | APT10021JFLL | NCE30P12BS | SSW65R190S2 | NP180N04TUJ | SRT10N160LD
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History: UTM4052G-TN4-T | SM4186T9RL | APT10021JFLL | NCE30P12BS | SSW65R190S2 | NP180N04TUJ | SRT10N160LD
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