All MOSFET. SSZ65R041SFD2 Datasheet

 

SSZ65R041SFD2 Datasheet and Replacement


   Type Designator: SSZ65R041SFD2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 330 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 64 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
   Package: TO247-4L
 

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SSZ65R041SFD2 Datasheet (PDF)

 ..1. Size:785K  cn super semi
 ssz65r041sfd2.pdf pdf_icon

SSZ65R041SFD2

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor650V Super Junction Power MOSFET Gen- With Fast-RecoverySS*65R041SFD2Rev. 1.0Mar. 2023www.supersemi.com.cnSSZ65R041SFD2650V N-Channel Super-Junction MOSFET Gen-With Fast-RecoveryDescription FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process

 7.1. Size:874K  cn super semi
 ssz65r022sfd3.pdf pdf_icon

SSZ65R041SFD2

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor650V Super Junction Power MOSFET Gen- With Fast-RecoverySS*65R022SFD3Rev. 1.0Mar. 2023www.supersemi.com.cnSSZ65R022SFD3650V N-Channel Super-Junction MOSFET Gen-With Fast-RecoveryDescription FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process

Datasheet: SSW80R380S2 , SSW85R105SFD , SSW90R130S , SSW90R160S2 , SSW90R160SFD , SSW90R240S2 , SSW90R420S2 , SSZ65R022SFD3 , 2N60 , SWB015R03VLT , SWB020R03VLT , SWB030R04VT , SWB031R06ET , SWB036R10E8S , SWB042R10ES , SWB046R08E8T , SWB046R08E9T .

History: FQI2N30TU | LP3218DT1G

Keywords - SSZ65R041SFD2 MOSFET datasheet

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