SSZ65R041SFD2 Datasheet and Replacement
Type Designator: SSZ65R041SFD2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 330 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id| ⓘ - Maximum Drain Current: 64 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 140 nC
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 230 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
Package: TO247-4L
SSZ65R041SFD2 substitution
SSZ65R041SFD2 Datasheet (PDF)
ssz65r041sfd2.pdf

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor650V Super Junction Power MOSFET Gen- With Fast-RecoverySS*65R041SFD2Rev. 1.0Mar. 2023www.supersemi.com.cnSSZ65R041SFD2650V N-Channel Super-Junction MOSFET Gen-With Fast-RecoveryDescription FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process
ssz65r022sfd3.pdf

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor650V Super Junction Power MOSFET Gen- With Fast-RecoverySS*65R022SFD3Rev. 1.0Mar. 2023www.supersemi.com.cnSSZ65R022SFD3650V N-Channel Super-Junction MOSFET Gen-With Fast-RecoveryDescription FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: BRCS050N04RA
Keywords - SSZ65R041SFD2 MOSFET datasheet
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SSZ65R041SFD2 replacement
History: BRCS050N04RA



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