All MOSFET. SWB030R04VT Datasheet

 

SWB030R04VT Datasheet and Replacement


   Type Designator: SWB030R04VT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 121 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 130 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 54 nS
   Cossⓘ - Output Capacitance: 773 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: TO263
 

 SWB030R04VT substitution

   - MOSFET ⓘ Cross-Reference Search

 

SWB030R04VT Datasheet (PDF)

 ..1. Size:978K  samwin
 swp030r04vt swb030r04vt.pdf pdf_icon

SWB030R04VT

SW030R04VTN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 BVDSS : 40VTO-263 High ruggednessID : 130A Low RDS(ON) (Typ 3.7m)@VGS=4.5VRDS(ON) : 3.7m@VGS=4.5V(Typ 2.8m)@VGS=10V Low Gate Charge (Typ 120nC)2.8m@VGS=10V Improved dv/dt Capability 1 12 2 100% Avalanche Tested23 3 Application:Power Supply,LED Boost1. Gate 2.

 9.1. Size:752K  samwin
 swp036r10e8s swb036r10e8s.pdf pdf_icon

SWB030R04VT

SW036R10E8SN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 100V High ruggednessID : 175A Low RDS(ON) (Typ 3.8m)@VGS=10V Low Gate Charge (Typ 85nC)RDS(ON) :3.8m Improved dv/dt Capability 100% Avalanche Tested211 Application:Synchronous Rectification,2233Li Battery Protect Board, Motor Drivers11. Gate 2.

 9.2. Size:725K  samwin
 swp031r06et swb031r06et.pdf pdf_icon

SWB030R04VT

SW031R06ET N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-263 TO-220 BVDSS : 60V High ruggedness ID : 120A Low RDS(ON) (Typ 3.0m)@VGS=10V RDS(ON) : 3.0m Low Gate Charge (Typ 148nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application:Electronic Ballast , Motor 3 3 Control , Synchronous Rectificat

 9.3. Size:646K  samwin
 swb035r08et.pdf pdf_icon

SWB030R04VT

SW035R08ET N-channel Enhanced mode TO-263 MOSFET Features TO-263 BVDSS : 80V High ruggedness ID : 120A Low RDS(ON) (Typ 3.3m)@VGS=10V RDS(ON) : 3.3m Low Gate Charge (Typ 185nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 Application:Synchronous Rectification, Inverter, 2 3 Li Battery Protect Board 1 1. Gate 2. Drain 3. Sou

SHOW MORE

Datasheet: SSW90R160S2 , SSW90R160SFD , SSW90R240S2 , SSW90R420S2 , SSZ65R022SFD3 , SSZ65R041SFD2 , SWB015R03VLT , SWB020R03VLT , IRF2807 , SWB031R06ET , SWB036R10E8S , SWB042R10ES , SWB046R08E8T , SWB046R08E9T , SWB046R68E8T , SWB050R95E8S , SWB051R08ES .

History: AP9973GJ-HF | SFF440 | SIHF9530S

Keywords - SWB030R04VT MOSFET datasheet

 SWB030R04VT cross reference
 SWB030R04VT equivalent finder
 SWB030R04VT lookup
 SWB030R04VT substitution
 SWB030R04VT replacement

 

 
Back to Top

 


 
.