SWB030R04VT PDF and Equivalents Search

 

SWB030R04VT Specs and Replacement

Type Designator: SWB030R04VT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 121 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 130 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 54 nS

Cossⓘ - Output Capacitance: 773 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm

Package: TO263

SWB030R04VT substitution

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SWB030R04VT datasheet

 ..1. Size:978K  samwin
swp030r04vt swb030r04vt.pdf pdf_icon

SWB030R04VT

SW030R04VT N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 BVDSS 40V TO-263 High ruggedness ID 130A Low RDS(ON) (Typ 3.7m )@VGS=4.5V RDS(ON) 3.7m @VGS=4.5V (Typ 2.8m )@VGS=10V Low Gate Charge (Typ 120nC) 2.8m @VGS=10V Improved dv/dt Capability 1 1 2 2 100% Avalanche Tested 2 3 3 Application Power Supply,LED Boost 1. Gate 2.... See More ⇒

 9.1. Size:752K  samwin
swp036r10e8s swb036r10e8s.pdf pdf_icon

SWB030R04VT

SW036R10E8S N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 100V High ruggedness ID 175A Low RDS(ON) (Typ 3.8m )@VGS=10V Low Gate Charge (Typ 85nC) RDS(ON) 3.8m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Motor Drivers 1 1. Gate 2.... See More ⇒

 9.2. Size:725K  samwin
swp031r06et swb031r06et.pdf pdf_icon

SWB030R04VT

SW031R06ET N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-263 TO-220 BVDSS 60V High ruggedness ID 120A Low RDS(ON) (Typ 3.0m )@VGS=10V RDS(ON) 3.0m Low Gate Charge (Typ 148nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application Electronic Ballast , Motor 3 3 Control , Synchronous Rectificat... See More ⇒

 9.3. Size:646K  samwin
swb035r08et.pdf pdf_icon

SWB030R04VT

SW035R08ET N-channel Enhanced mode TO-263 MOSFET Features TO-263 BVDSS 80V High ruggedness ID 120A Low RDS(ON) (Typ 3.3m )@VGS=10V RDS(ON) 3.3m Low Gate Charge (Typ 185nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 Application Synchronous Rectification, Inverter, 2 3 Li Battery Protect Board 1 1. Gate 2. Drain 3. Sou... See More ⇒

Detailed specifications: SSW90R160S2, SSW90R160SFD, SSW90R240S2, SSW90R420S2, SSZ65R022SFD3, SSZ65R041SFD2, SWB015R03VLT, SWB020R03VLT, STF13NM60N, SWB031R06ET, SWB036R10E8S, SWB042R10ES, SWB046R08E8T, SWB046R08E9T, SWB046R68E8T, SWB050R95E8S, SWB051R08ES

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