SWB031R06ET MOSFET Datasheet: N-Ch, 60V, 120A. Full specification with pinout and replacement list

SWB031R06ET Specs and Replacement

Type Designator: SWB031R06ET

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 245 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 231 nS

Cossⓘ - Output Capacitance: 990 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm

Package: TO263

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SWB031R06ET datasheet

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SW031R06ET N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-263 TO-220 BVDSS 60V High ruggedness ID 120A Low RDS(ON) (Typ 3.0m )@VGS=10V RDS(ON) 3.0m Low Gate Charge (Typ 148nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application Electronic Ballast , Motor 3 3 Control , Synchronous Rectificat... See More ⇒

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SW036R10E8S N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 100V High ruggedness ID 175A Low RDS(ON) (Typ 3.8m )@VGS=10V Low Gate Charge (Typ 85nC) RDS(ON) 3.8m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Motor Drivers 1 1. Gate 2.... See More ⇒

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SW035R08ET N-channel Enhanced mode TO-263 MOSFET Features TO-263 BVDSS 80V High ruggedness ID 120A Low RDS(ON) (Typ 3.3m )@VGS=10V RDS(ON) 3.3m Low Gate Charge (Typ 185nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 Application Synchronous Rectification, Inverter, 2 3 Li Battery Protect Board 1 1. Gate 2. Drain 3. Sou... See More ⇒

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SW038R10ES N-channel Enhanced mode TO-263/TO-220 MOSFET Features TO-263 TO-220 BVDSS 100V High ruggedness ID 120A Low RDS(ON) (Typ 3.6m )@VGS=10V RDS(ON) 3.6m Low Gate Charge (Typ 132nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 1 2 Application Synchronous Rectification, 2 3 3 Inverter , Li Battery Protect Bo... See More ⇒