All MOSFET. SWB031R06ET Datasheet

 

SWB031R06ET Datasheet and Replacement


   Type Designator: SWB031R06ET
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 245 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 231 nS
   Cossⓘ - Output Capacitance: 990 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
   Package: TO263
 

 SWB031R06ET substitution

   - MOSFET ⓘ Cross-Reference Search

 

SWB031R06ET Datasheet (PDF)

 ..1. Size:725K  samwin
 swp031r06et swb031r06et.pdf pdf_icon

SWB031R06ET

SW031R06ET N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-263 TO-220 BVDSS : 60V High ruggedness ID : 120A Low RDS(ON) (Typ 3.0m)@VGS=10V RDS(ON) : 3.0m Low Gate Charge (Typ 148nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application:Electronic Ballast , Motor 3 3 Control , Synchronous Rectificat

 9.1. Size:752K  samwin
 swp036r10e8s swb036r10e8s.pdf pdf_icon

SWB031R06ET

SW036R10E8SN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 100V High ruggednessID : 175A Low RDS(ON) (Typ 3.8m)@VGS=10V Low Gate Charge (Typ 85nC)RDS(ON) :3.8m Improved dv/dt Capability 100% Avalanche Tested211 Application:Synchronous Rectification,2233Li Battery Protect Board, Motor Drivers11. Gate 2.

 9.2. Size:646K  samwin
 swb035r08et.pdf pdf_icon

SWB031R06ET

SW035R08ET N-channel Enhanced mode TO-263 MOSFET Features TO-263 BVDSS : 80V High ruggedness ID : 120A Low RDS(ON) (Typ 3.3m)@VGS=10V RDS(ON) : 3.3m Low Gate Charge (Typ 185nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 Application:Synchronous Rectification, Inverter, 2 3 Li Battery Protect Board 1 1. Gate 2. Drain 3. Sou

 9.3. Size:728K  samwin
 swb038r10es swp038r10es.pdf pdf_icon

SWB031R06ET

SW038R10ES N-channel Enhanced mode TO-263/TO-220 MOSFET Features TO-263 TO-220 BVDSS : 100V High ruggedness ID : 120A Low RDS(ON) (Typ 3.6m)@VGS=10V RDS(ON) : 3.6m Low Gate Charge (Typ 132nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 1 2 Application:Synchronous Rectification, 2 3 3 Inverter , Li Battery Protect Bo

SHOW MORE

Datasheet: SSW90R160SFD , SSW90R240S2 , SSW90R420S2 , SSZ65R022SFD3 , SSZ65R041SFD2 , SWB015R03VLT , SWB020R03VLT , SWB030R04VT , AON6380 , SWB036R10E8S , SWB042R10ES , SWB046R08E8T , SWB046R08E9T , SWB046R68E8T , SWB050R95E8S , SWB051R08ES , SWB055R68E7T .

History: CTLM8110-M832D | HSS2306A

Keywords - SWB031R06ET MOSFET datasheet

 SWB031R06ET cross reference
 SWB031R06ET equivalent finder
 SWB031R06ET lookup
 SWB031R06ET substitution
 SWB031R06ET replacement

 

 
Back to Top

 


 
.