SWB042R10ES PDF and Equivalents Search

 

SWB042R10ES Specs and Replacement

Type Designator: SWB042R10ES

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 235 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 107 nS

Cossⓘ - Output Capacitance: 895 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm

Package: TO263

SWB042R10ES substitution

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SWB042R10ES datasheet

 ..1. Size:729K  samwin
 swp042r10es swb042r10es.pdf pdf_icon

SWB042R10ES

SW042R10ES N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 100V ID 120A High ruggedness Low RDS(ON) (Typ 4.4m )@VGS=10V RDS(ON) 4.4m Low Gate Charge (Typ 106nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 2 1 2 3 Application Synchronous Rectification, 3 Li Battery Protect Board, In... See More ⇒

 9.1. Size:737K  samwin
 swp046r08e8t swb046r08e8t.pdf pdf_icon

SWB042R10ES

SW046R08E8T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 80V High ruggedness ID 150A Low RDS(ON) (Typ 4.8m )@VGS=10V RDS(ON) 4.8m Low Gate Charge (Typ 183nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application Synchronous Rectification, 3 3 1 Li Battery Protect Board, Inverter 1. Gate 2.Drain 3... See More ⇒

 9.2. Size:741K  samwin
 swp046r08e9t swb046r08e9t.pdf pdf_icon

SWB042R10ES

SW046R08E9T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 80V High ruggedness Low RDS(ON) (Typ 4.5m )@VGS=10V ID 160A Low Gate Charge (Typ 182nC) RDS(ON) 4.5m Improved dv/dt Capability 100% Avalanche Tested 2 Application Synchronous Rectification, 1 1 2 2 Li Battery Protect Board, Inverter 3 3 1 1. Gate 2.Drain 3.... See More ⇒

 9.3. Size:800K  samwin
 swp046r68e8t swb046r68e8t.pdf pdf_icon

SWB042R10ES

SW046R68E8T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 68V High ruggedness Low RDS(ON) (Typ 4.6m )@VGS=10V ID 145A Low Gate Charge (Typ 145nC) RDS(ON) 4.6m Improved dv/dt Capability 100% Avalanche Tested 2 1 Application Synchronous Rectification, 2 1 2 3 Li Battery Protect Board, Inverter 3 1 1. Gate 2.Drain ... See More ⇒

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Detailed specifications: SSW90R420S2, SSZ65R022SFD3, SSZ65R041SFD2, SWB015R03VLT, SWB020R03VLT, SWB030R04VT, SWB031R06ET, SWB036R10E8S, 8N60, SWB046R08E8T, SWB046R08E9T, SWB046R68E8T, SWB050R95E8S, SWB051R08ES, SWB055R68E7T, SWB056R68E7T, SWB058R06E7T

Keywords - SWB042R10ES MOSFET specs

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