SWB042R10ES - аналоги, параметры транзистора - Справочник транзисторов

SWB042R10ES даташит

..1. Size:729K samwin
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SW042R10ES N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 100V ID 120A High ruggedness Low RDS(ON) (Typ 4.4m )@VGS=10V RDS(ON) 4.4m Low Gate Charge (Typ 106nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 2 1 2 3 Application Synchronous Rectification, 3 Li Battery Protect Board, In

9.1. Size:737K samwin
swp046r08e8t swb046r08e8t.pdf pdf_icon

SW046R08E8T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 80V High ruggedness ID 150A Low RDS(ON) (Typ 4.8m )@VGS=10V RDS(ON) 4.8m Low Gate Charge (Typ 183nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application Synchronous Rectification, 3 3 1 Li Battery Protect Board, Inverter 1. Gate 2.Drain 3

9.2. Size:741K samwin
swp046r08e9t swb046r08e9t.pdf pdf_icon

SW046R08E9T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 80V High ruggedness Low RDS(ON) (Typ 4.5m )@VGS=10V ID 160A Low Gate Charge (Typ 182nC) RDS(ON) 4.5m Improved dv/dt Capability 100% Avalanche Tested 2 Application Synchronous Rectification, 1 1 2 2 Li Battery Protect Board, Inverter 3 3 1 1. Gate 2.Drain 3.

9.3. Size:800K samwin
swp046r68e8t swb046r68e8t.pdf pdf_icon

SW046R68E8T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 68V High ruggedness Low RDS(ON) (Typ 4.6m )@VGS=10V ID 145A Low Gate Charge (Typ 145nC) RDS(ON) 4.6m Improved dv/dt Capability 100% Avalanche Tested 2 1 Application Synchronous Rectification, 2 1 2 3 Li Battery Protect Board, Inverter 3 1 1. Gate 2.Drain

Другие MOSFET... SSW90R420S2 , SSZ65R022SFD3 , SSZ65R041SFD2 , SWB015R03VLT , SWB020R03VLT , SWB030R04VT , SWB031R06ET , SWB036R10E8S , 8N60 , SWB046R08E8T , SWB046R08E9T , SWB046R68E8T , SWB050R95E8S , SWB051R08ES , SWB055R68E7T , SWB056R68E7T , SWB058R06E7T .