SWB046R08E9T MOSFET Datasheet: N-Ch, 80V, 160A. Full specification with pinout and replacement list

SWB046R08E9T Specs and Replacement

Type Designator: SWB046R08E9T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 245 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 160 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 75 nS

Cossⓘ - Output Capacitance: 625 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0059 Ohm

Package: TO263

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SWB046R08E9T datasheet

..1. Size:741K samwin
swp046r08e9t swb046r08e9t.pdf pdf_icon

SW046R08E9T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 80V High ruggedness Low RDS(ON) (Typ 4.5m )@VGS=10V ID 160A Low Gate Charge (Typ 182nC) RDS(ON) 4.5m Improved dv/dt Capability 100% Avalanche Tested 2 Application Synchronous Rectification, 1 1 2 2 Li Battery Protect Board, Inverter 3 3 1 1. Gate 2.Drain 3.... See More ⇒

4.1. Size:737K samwin
swp046r08e8t swb046r08e8t.pdf pdf_icon

SW046R08E8T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 80V High ruggedness ID 150A Low RDS(ON) (Typ 4.8m )@VGS=10V RDS(ON) 4.8m Low Gate Charge (Typ 183nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application Synchronous Rectification, 3 3 1 Li Battery Protect Board, Inverter 1. Gate 2.Drain 3... See More ⇒

7.1. Size:800K samwin
swp046r68e8t swb046r68e8t.pdf pdf_icon

SW046R68E8T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 68V High ruggedness Low RDS(ON) (Typ 4.6m )@VGS=10V ID 145A Low Gate Charge (Typ 145nC) RDS(ON) 4.6m Improved dv/dt Capability 100% Avalanche Tested 2 1 Application Synchronous Rectification, 2 1 2 3 Li Battery Protect Board, Inverter 3 1 1. Gate 2.Drain ... See More ⇒

9.1. Size:729K samwin
swp042r10es swb042r10es.pdf pdf_icon

SW042R10ES N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 100V ID 120A High ruggedness Low RDS(ON) (Typ 4.4m )@VGS=10V RDS(ON) 4.4m Low Gate Charge (Typ 106nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 2 1 2 3 Application Synchronous Rectification, 3 Li Battery Protect Board, In... See More ⇒

Detailed specifications: SSZ65R041SFD2, SWB015R03VLT, SWB020R03VLT, SWB030R04VT, SWB031R06ET, SWB036R10E8S, SWB042R10ES, SWB046R08E8T, 75N75, SWB046R68E8T, SWB050R95E8S, SWB051R08ES, SWB055R68E7T, SWB056R68E7T, SWB058R06E7T, SWB058R65E7T, SWB060R65E7T