All MOSFET. SWB060R68E7T Datasheet

 

SWB060R68E7T Datasheet and Replacement


   Type Designator: SWB060R68E7T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 171 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 110 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 313 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: TO263
 

 SWB060R68E7T substitution

   - MOSFET ⓘ Cross-Reference Search

 

SWB060R68E7T Datasheet (PDF)

 ..1. Size:816K  samwin
 swp060r68e7t swb060r68e7t.pdf pdf_icon

SWB060R68E7T

SW060R68E7TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 68V High ruggedness Low RDS(ON) (Typ 5.6m)@VGS=10V ID : 110A Low Gate Charge (Typ 94nC)RDS(ON) : 5.6m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Inverter11. Gate 2.Drain 3.S

 6.1. Size:813K  samwin
 swp060r65e7t swb060r65e7t.pdf pdf_icon

SWB060R68E7T

SW060R65E7TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 65V High ruggedness Low RDS(ON) (Typ 5.6m)@VGS=10V ID : 110A Low Gate Charge (Typ 94nC)RDS(ON) : 5.6m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Inverter11. Gate 2.Drain 3.S

 9.1. Size:775K  samwin
 swp068r68e7t swb068r68e7t.pdf pdf_icon

SWB060R68E7T

SW068R68E7TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 68V High ruggednessID : 90A Low RDS(ON) (Typ 6.8m)@VGS=10V Low Gate Charge (Typ 78nC)RDS(ON) :6.8m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Inverter11. Gate 2.Drain 3.So

 9.2. Size:768K  samwin
 swp065r68e7t swb065r68e7t.pdf pdf_icon

SWB060R68E7T

SW065R68E7T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS : 68V High ruggedness Low RDS(ON) (Typ 6.3m)@VGS=10V ID : 100A Low Gate Charge (Typ 75nC) RDS(ON) : 6.3m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application:Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter 1

SHOW MORE

Datasheet: SWB046R68E8T , SWB050R95E8S , SWB051R08ES , SWB055R68E7T , SWB056R68E7T , SWB058R06E7T , SWB058R65E7T , SWB060R65E7T , 60N06 , SWB062R08E8T , SWB062R68E7T , SWB065R68E7T , SWB068R08ET , SWB068R68E7T , SWB072R06ET , SWB072R08ET , SWB075R08E7T .

History: QM6016D | KU310N10F | 2SJ245L | SSM3K335R | APT47N60BCFG | CS6N100P | CS50N06P

Keywords - SWB060R68E7T MOSFET datasheet

 SWB060R68E7T cross reference
 SWB060R68E7T equivalent finder
 SWB060R68E7T lookup
 SWB060R68E7T substitution
 SWB060R68E7T replacement

 

 
Back to Top

 


 
.