SWB060R68E7T PDF and Equivalents Search

 

SWB060R68E7T Specs and Replacement

Type Designator: SWB060R68E7T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 171 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 58 nS

Cossⓘ - Output Capacitance: 313 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: TO263

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SWB060R68E7T datasheet

 ..1. Size:816K  samwin
 swp060r68e7t swb060r68e7t.pdf pdf_icon

SWB060R68E7T

SW060R68E7T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 68V High ruggedness Low RDS(ON) (Typ 5.6m )@VGS=10V ID 110A Low Gate Charge (Typ 94nC) RDS(ON) 5.6m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.S... See More ⇒

 6.1. Size:813K  samwin
 swp060r65e7t swb060r65e7t.pdf pdf_icon

SWB060R68E7T

SW060R65E7T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 65V High ruggedness Low RDS(ON) (Typ 5.6m )@VGS=10V ID 110A Low Gate Charge (Typ 94nC) RDS(ON) 5.6m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.S... See More ⇒

 9.1. Size:775K  samwin
 swp068r68e7t swb068r68e7t.pdf pdf_icon

SWB060R68E7T

SW068R68E7T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 68V High ruggedness ID 90A Low RDS(ON) (Typ 6.8m )@VGS=10V Low Gate Charge (Typ 78nC) RDS(ON) 6.8m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.So... See More ⇒

 9.2. Size:768K  samwin
 swp065r68e7t swb065r68e7t.pdf pdf_icon

SWB060R68E7T

SW065R68E7T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 68V High ruggedness Low RDS(ON) (Typ 6.3m )@VGS=10V ID 100A Low Gate Charge (Typ 75nC) RDS(ON) 6.3m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter 1 ... See More ⇒

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Detailed specifications: SWB046R68E8T, SWB050R95E8S, SWB051R08ES, SWB055R68E7T, SWB056R68E7T, SWB058R06E7T, SWB058R65E7T, SWB060R65E7T, IRLB3034, SWB062R08E8T, SWB062R68E7T, SWB065R68E7T, SWB068R08ET, SWB068R68E7T, SWB072R06ET, SWB072R08ET, SWB075R08E7T

Keywords - SWB060R68E7T MOSFET specs

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