All MOSFET. SWB068R68E7T Datasheet

 

SWB068R68E7T Datasheet and Replacement


   Type Designator: SWB068R68E7T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 178.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 90 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 74 nS
   Cossⓘ - Output Capacitance: 244 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0081 Ohm
   Package: TO263
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SWB068R68E7T Datasheet (PDF)

 ..1. Size:775K  samwin
 swp068r68e7t swb068r68e7t.pdf pdf_icon

SWB068R68E7T

SW068R68E7TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 68V High ruggednessID : 90A Low RDS(ON) (Typ 6.8m)@VGS=10V Low Gate Charge (Typ 78nC)RDS(ON) :6.8m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Inverter11. Gate 2.Drain 3.So

 7.1. Size:853K  samwin
 swp068r08et swb068r08et.pdf pdf_icon

SWB068R68E7T

SW068R08ETN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesBVDSS : 80VTO-220TO-263 High ruggedness ID : 120A Low RDS(ON) (Typ 7.1m)@VGS=10VRDS(ON) : 7.1m Low Gate Charge (Typ 59nC) Improved dv/dt Capability 21 100% Avalanche Tested1223 Application: Synchronous Rectification, 13Li Battery Protect Board, Inverter1. Gate 2. Drain

 9.1. Size:768K  samwin
 swp065r68e7t swb065r68e7t.pdf pdf_icon

SWB068R68E7T

SW065R68E7T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS : 68V High ruggedness Low RDS(ON) (Typ 6.3m)@VGS=10V ID : 100A Low Gate Charge (Typ 75nC) RDS(ON) : 6.3m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application:Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter 1

 9.2. Size:772K  samwin
 swp062r68e7t swb062r68e7t.pdf pdf_icon

SWB068R68E7T

SW062R68E7TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 68V High ruggednessID : 100A Low RDS(ON) (Typ 6.2m)@VGS=10V Low Gate Charge (Typ 85nC)RDS(ON) :6.2m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Inverter11. Gate 2.Drain 3.S

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Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: DMK10N60 | CS3N90FA9H | FQU13N10 | SFB053N100C3 | NTMFS4837NHT1G | SWMI4N65D | BMS3003

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