STB31L01 Datasheet and Replacement

GrerrPPrPrProSTB31L01aS mHop Microelectronics C orp.Ver 1.1N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m ) TypVDSS IDRugged and reliable.100V 26A 49 @ VGS=10VTO-263 Package.STB SERIESTO-263(DD-PAK)(TC=25C unless otherwise noted)ABSOLUTE MAXIMUM RATINGS

STB31N65M5, STF31N65M5STP31N65M5, STW31N65M5DatasheetN-channel 650 V, 0.124 , 22 A, MDmesh M5 Power MOSFETs in D2PAK, TO220FP, TO220 and TO-247 packagesFeaturesTABVDS @ TJMAX RDS(on ) max. IDOrder code Package3132STB31N65M5D2PAKD PAK 21TO-220FPSTF31N65M5 TO-220FPTAB710 V 0.148 22 ASTP31N65M5 TO-220STW31N65M5 TO-247332TO-220 2TO-24

STB31N65M5, STF31N65M5, STFI31N65M5, STP31N65M5, STW31N65M5N-channel 650 V, 0.124 typ., 22 A MDmesh V Power MOSFET in D2PAK, TO-220FP, I2PakFP, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABOrder codes VDSS @ TJmax RDS(on) max ID231STB31N65M53TAB 2D2PAK1STF31N65M5TO-220FPSTFI31N65M5 710 V

Isc N-Channel MOSFET Transistor STB31N65M5FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo