All MOSFET. SWD040R03VLT Datasheet

 

SWD040R03VLT Datasheet and Replacement


   Type Designator: SWD040R03VLT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0049 Ohm
   Package: TO252
 

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SWD040R03VLT Datasheet (PDF)

 ..1. Size:743K  samwin
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SWD040R03VLT

SW040R03VLTN-channel Enhanced mode TO-252 MOSFETFeaturesTO-252BVDSS : 30V High ruggednessID : 100A Low RDS(ON) (Typ 5.1m)@VGS=4.5V(Typ 3.7m)@VGS=10VRDS(ON) : 5.1m@VGS=4.5V Low Gate Charge (Typ 59nC)3.7m@VGS=10V Improved dv/dt Capability 1 100% Avalanche Tested23 Application:Synchronous Rectification, 2Li Battery Protect Board, In

 9.1. Size:773K  samwin
 swd046r68e8t.pdf pdf_icon

SWD040R03VLT

SW046R68E8TN-channel Enhanced mode TO-252 MOSFETFeaturesTO-252BVDSS : 68V High ruggednessID : 120A Low RDS(ON) (Typ 4.8m)@VGS=10VRDS(ON) : 4.8m Low Gate Charge (Typ 146nC) Improved dv/dt Capability 2 100% Avalanche Tested12 Application:Synchronous Rectification,31Li Battery Protect Board, Inverter1. Gate 2.Drain 3.SourceGeneral Des

Datasheet: SWB640D , SWB7N65DW , SWC1N60 , SWC2N40D , SWD020R03VLT , SWD026R03VT , SWD030R03VLT , SWD030R04VT , IRF640N , SWD046R68E8T , SWD050R95E8S , SWD051R08ES , SWD055R03VT , SWD056R68E7T , SWD062R08E8T , SWD062R68E7T , SWD065R03VLT .

History: PSA06N70

Keywords - SWD040R03VLT MOSFET datasheet

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