SWD050R95E8S
MOSFET. Datasheet pdf. Equivalent
Type Designator: SWD050R95E8S
Marking Code: SW050R95E8S
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 166.7
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5
V
|Id|ⓘ - Maximum Drain Current: 100
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 48
nC
trⓘ - Rise Time: 32
nS
Cossⓘ -
Output Capacitance: 509
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0066
Ohm
Package:
TO252
SWD050R95E8S
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SWD050R95E8S
Datasheet (PDF)
..1. Size:846K samwin
swd050r95e8s.pdf
SW050R95E8SN-channel Enhanced mode TO-252 MOSFETFeaturesTO-252BVDSS : 100V High ruggednessID : 100A Low RDS(ON) (Typ 6.0m)@VGS=10V Low Gate Charge (Typ 48nC)RDS(ON) : 6.0m Improved dv/dt Capability 100% Avalanche Tested21 Application:Synchronous Rectification,23Li Battery Protect Board, Motor Drives11. Gate 2.Drain 3.SourceGeneral
9.1. Size:659K samwin
swd055r03vt swi055r03vt.pdf
SW055R03VTN-channel Enhanced mode TO-252/TO-251 MOSFETFeaturesBVDSS : 30VTO-252 TO-251 High ruggednessID : 80A Low RDS(ON) (Typ 6.2m)@VGS=4.5VRDS(ON) : 6.2m@VGS=4.5V(Typ 4.4m)@VGS=10V Low Gate Charge (Typ 25nC)4.4m@VGS=10V Improved dv/dt Capability 1122 100% Avalanche Tested 233 Application:DC-DC Converter,Motor ControlS
9.2. Size:820K samwin
swd056r68e7t.pdf
SW056R68E7TN-channel Enhanced mode TO-252 MOSFETFeaturesTO-252BVDSS : 68V High ruggednessID : 100A Low RDS(ON) (Typ 5.7m)@VGS=10V Low Gate Charge (Typ 102nC)RDS(ON) :5.7m Improved dv/dt Capability 100% Avalanche Tested21 Application:Synchronous Rectification,23Li Battery Protect Board, Inverter11. Gate 2.Drain 3.SourceGeneral Desc
9.3. Size:614K samwin
swi051r08es swd051r08es.pdf
SW051R08ES N-channel Enhanced mode TO-251/TO-252 MOSFET Features BVDSS : 80V TO-251 TO-252 ID : 90A High ruggedness Low RDS(ON) (Typ 5.6m)@VGS=10V RDS(ON) : 5.6m Low Gate Charge (Typ 44nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 Application:Synchronous Rectification, 2 3 3 1 Li Battery Protect Board, Inv
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