SWD050R95E8S - параметры транзистора MOSFET, его аналоги, datasheet

SWD050R95E8S Datasheet (PDF)

..1. Size:846K samwin
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SW050R95E8SN-channel Enhanced mode TO-252 MOSFETFeaturesTO-252BVDSS : 100V High ruggednessID : 100A Low RDS(ON) (Typ 6.0m)@VGS=10V Low Gate Charge (Typ 48nC)RDS(ON) : 6.0m Improved dv/dt Capability 100% Avalanche Tested21 Application:Synchronous Rectification,23Li Battery Protect Board, Motor Drives11. Gate 2.Drain 3.SourceGeneral

9.1. Size:659K samwin
swd055r03vt swi055r03vt.pdf pdf_icon

SW055R03VTN-channel Enhanced mode TO-252/TO-251 MOSFETFeaturesBVDSS : 30VTO-252 TO-251 High ruggednessID : 80A Low RDS(ON) (Typ 6.2m)@VGS=4.5VRDS(ON) : 6.2m@VGS=4.5V(Typ 4.4m)@VGS=10V Low Gate Charge (Typ 25nC)4.4m@VGS=10V Improved dv/dt Capability 1122 100% Avalanche Tested 233 Application:DC-DC Converter,Motor ControlS

9.2. Size:820K samwin
swd056r68e7t.pdf pdf_icon

SW056R68E7TN-channel Enhanced mode TO-252 MOSFETFeaturesTO-252BVDSS : 68V High ruggednessID : 100A Low RDS(ON) (Typ 5.7m)@VGS=10V Low Gate Charge (Typ 102nC)RDS(ON) :5.7m Improved dv/dt Capability 100% Avalanche Tested21 Application:Synchronous Rectification,23Li Battery Protect Board, Inverter11. Gate 2.Drain 3.SourceGeneral Desc

9.3. Size:614K samwin
swi051r08es swd051r08es.pdf pdf_icon

SW051R08ES N-channel Enhanced mode TO-251/TO-252 MOSFET Features BVDSS : 80V TO-251 TO-252 ID : 90A High ruggedness Low RDS(ON) (Typ 5.6m)@VGS=10V RDS(ON) : 5.6m Low Gate Charge (Typ 44nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 Application:Synchronous Rectification, 2 3 3 1 Li Battery Protect Board, Inv

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