SWD070R08E7T MOSFET Datasheet: N-Ch, 80V, 95A. Full specification with pinout and replacement list

SWD070R08E7T Specs and Replacement

Type Designator: SWD070R08E7T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 130.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 95 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 73 nS

Cossⓘ - Output Capacitance: 274 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO252

SWD070R08E7T substitution

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SWD070R08E7T datasheet

..1. Size:726K samwin
swd070r08e7t.pdf pdf_icon

SW070R08E7T N-channel Enhanced mode TO-252 MOSFET Features TO-252 BVDSS 80V High ruggedness ID 95A Low RDS(ON) (Typ 7.6m )@VGS=10V RDS(ON) 7.6m Low Gate Charge (Typ 101nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 Application Synchronous Rectification, 3 1 Li Battery Protect Board, Inverter 1. Gate 2.Drain 3.Source General Desc... See More ⇒

9.1. Size:657K samwin
swi075r06et swd075r06et.pdf pdf_icon

SW075R06ET N-channel Enhanced mode TO-251/TO-252 MOSFET Features TO-251 TO-252 BVDSS 60V High ruggedness ID 65A Low RDS(ON) (Typ 7.5m )@VGS=10V Low Gate Charge (Typ 78nC) RDS(ON) 7.5m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter 1 1. Gate 2. Drai... See More ⇒

9.2. Size:728K samwin
swd076r68e7t.pdf pdf_icon

SW076R68E7T N-channel Enhanced mode TO-252 MOSFET Features TO-252 BVDSS 68V High ruggedness ID 85A Low RDS(ON) (Typ 8m )@VGS=10V Low Gate Charge (Typ 80nC) RDS(ON) 8m Improved dv/dt Capability 100% Avalanche Tested 2 1 2 Application Synchronous Rectification, 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.Source 3 General Descrip... See More ⇒

9.3. Size:719K samwin
swd078r08e8t.pdf pdf_icon

SW078R08E8T N-channel Enhanced mode TO-252 MOSFET Features TO-252 BVDSS 80V High ruggedness ID 95A Low RDS(ON) (Typ 8.6m )@VGS=10V RDS(ON) 8.6m Low Gate Charge (Typ 92nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 Application Synchronous Rectification, 3 1 Li Battery Protect Board, Inverter 1. Gate 2.Drain 3.Source General Descr... See More ⇒

Detailed specifications: SWD055R03VT, SWD056R68E7T, SWD062R08E8T, SWD062R68E7T, SWD065R03VLT, SWD065R68E7T, SWD068R08E8T, SWD068R68E7T, 7N65, SWD075R06ET, SWD076R68E7T, SWD078R08E8T, SWD085R68E7T, SWD086R68E7T, SWD088R08E8T, SWD106R95VS, SWD10N50K