All MOSFET. SWD070R08E7T Datasheet

 

SWD070R08E7T MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWD070R08E7T
   Marking Code: SW070R08E7T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 130.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 95 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 101 nC
   trⓘ - Rise Time: 73 nS
   Cossⓘ - Output Capacitance: 274 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO252

 SWD070R08E7T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWD070R08E7T Datasheet (PDF)

 ..1. Size:726K  samwin
swd070r08e7t.pdf

SWD070R08E7T
SWD070R08E7T

SW070R08E7TN-channel Enhanced mode TO-252 MOSFETFeaturesTO-252BVDSS : 80V High ruggednessID : 95A Low RDS(ON) (Typ 7.6m)@VGS=10VRDS(ON) : 7.6m Low Gate Charge (Typ 101nC) Improved dv/dt Capability 2 100% Avalanche Tested12 Application:Synchronous Rectification,31Li Battery Protect Board, Inverter1. Gate 2.Drain 3.SourceGeneral Desc

 9.1. Size:657K  samwin
swi075r06et swd075r06et.pdf

SWD070R08E7T
SWD070R08E7T

SW075R06ETN-channel Enhanced mode TO-251/TO-252 MOSFETFeaturesTO-251 TO-252BVDSS : 60V High ruggednessID : 65A Low RDS(ON) (Typ 7.5m)@VGS=10V Low Gate Charge (Typ 78nC)RDS(ON) : 7.5m Improved dv/dt Capability 100% Avalanche Tested211 Application:Synchronous Rectification, 2233Li Battery Protect Board, Inverter11. Gate 2. Drai

 9.2. Size:728K  samwin
swd076r68e7t.pdf

SWD070R08E7T
SWD070R08E7T

SW076R68E7TN-channel Enhanced mode TO-252 MOSFETFeaturesTO-252BVDSS : 68V High ruggednessID : 85A Low RDS(ON) (Typ 8m)@VGS=10V Low Gate Charge (Typ 80nC)RDS(ON) : 8m Improved dv/dt Capability 100% Avalanche Tested 212 Application:Synchronous Rectification,3Li Battery Protect Board, Inverter11. Gate 2.Drain 3.Source3General Descrip

 9.3. Size:719K  samwin
swd078r08e8t.pdf

SWD070R08E7T
SWD070R08E7T

SW078R08E8TN-channel Enhanced mode TO-252 MOSFETFeaturesTO-252BVDSS : 80V High ruggednessID : 95A Low RDS(ON) (Typ 8.6m)@VGS=10VRDS(ON) : 8.6m Low Gate Charge (Typ 92nC) Improved dv/dt Capability 2 100% Avalanche Tested12 Application:Synchronous Rectification,31Li Battery Protect Board, Inverter1. Gate 2.Drain 3.SourceGeneral Descr

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
Back to Top