SWD070R08E7T - аналоги, параметры транзистора

SWD070R08E7T даташит

..1. Size:726K samwin
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SW070R08E7T N-channel Enhanced mode TO-252 MOSFET Features TO-252 BVDSS 80V High ruggedness ID 95A Low RDS(ON) (Typ 7.6m )@VGS=10V RDS(ON) 7.6m Low Gate Charge (Typ 101nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 Application Synchronous Rectification, 3 1 Li Battery Protect Board, Inverter 1. Gate 2.Drain 3.Source General Desc

9.1. Size:657K samwin
swi075r06et swd075r06et.pdf pdf_icon

SW075R06ET N-channel Enhanced mode TO-251/TO-252 MOSFET Features TO-251 TO-252 BVDSS 60V High ruggedness ID 65A Low RDS(ON) (Typ 7.5m )@VGS=10V Low Gate Charge (Typ 78nC) RDS(ON) 7.5m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter 1 1. Gate 2. Drai

9.2. Size:728K samwin
swd076r68e7t.pdf pdf_icon

SW076R68E7T N-channel Enhanced mode TO-252 MOSFET Features TO-252 BVDSS 68V High ruggedness ID 85A Low RDS(ON) (Typ 8m )@VGS=10V Low Gate Charge (Typ 80nC) RDS(ON) 8m Improved dv/dt Capability 100% Avalanche Tested 2 1 2 Application Synchronous Rectification, 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.Source 3 General Descrip

9.3. Size:719K samwin
swd078r08e8t.pdf pdf_icon

SW078R08E8T N-channel Enhanced mode TO-252 MOSFET Features TO-252 BVDSS 80V High ruggedness ID 95A Low RDS(ON) (Typ 8.6m )@VGS=10V RDS(ON) 8.6m Low Gate Charge (Typ 92nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 Application Synchronous Rectification, 3 1 Li Battery Protect Board, Inverter 1. Gate 2.Drain 3.Source General Descr

Другие MOSFET... SWD055R03VT , SWD056R68E7T , SWD062R08E8T , SWD062R68E7T , SWD065R03VLT , SWD065R68E7T , SWD068R08E8T , SWD068R68E7T , 7N65 , SWD075R06ET , SWD076R68E7T , SWD078R08E8T , SWD085R68E7T , SWD086R68E7T , SWD088R08E8T , SWD106R95VS , SWD10N50K .