SWD076R68E7T PDF and Equivalents Search

 

SWD076R68E7T Specs and Replacement

Type Designator: SWD076R68E7T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 85 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 61 nS

Cossⓘ - Output Capacitance: 231 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0091 Ohm

Package: TO252

SWD076R68E7T substitution

- MOSFET ⓘ Cross-Reference Search

 

SWD076R68E7T datasheet

 ..1. Size:728K  samwin
 swd076r68e7t.pdf pdf_icon

SWD076R68E7T

SW076R68E7T N-channel Enhanced mode TO-252 MOSFET Features TO-252 BVDSS 68V High ruggedness ID 85A Low RDS(ON) (Typ 8m )@VGS=10V Low Gate Charge (Typ 80nC) RDS(ON) 8m Improved dv/dt Capability 100% Avalanche Tested 2 1 2 Application Synchronous Rectification, 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.Source 3 General Descrip... See More ⇒

 9.1. Size:657K  samwin
 swi075r06et swd075r06et.pdf pdf_icon

SWD076R68E7T

SW075R06ET N-channel Enhanced mode TO-251/TO-252 MOSFET Features TO-251 TO-252 BVDSS 60V High ruggedness ID 65A Low RDS(ON) (Typ 7.5m )@VGS=10V Low Gate Charge (Typ 78nC) RDS(ON) 7.5m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter 1 1. Gate 2. Drai... See More ⇒

 9.2. Size:726K  samwin
 swd070r08e7t.pdf pdf_icon

SWD076R68E7T

SW070R08E7T N-channel Enhanced mode TO-252 MOSFET Features TO-252 BVDSS 80V High ruggedness ID 95A Low RDS(ON) (Typ 7.6m )@VGS=10V RDS(ON) 7.6m Low Gate Charge (Typ 101nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 Application Synchronous Rectification, 3 1 Li Battery Protect Board, Inverter 1. Gate 2.Drain 3.Source General Desc... See More ⇒

 9.3. Size:719K  samwin
 swd078r08e8t.pdf pdf_icon

SWD076R68E7T

SW078R08E8T N-channel Enhanced mode TO-252 MOSFET Features TO-252 BVDSS 80V High ruggedness ID 95A Low RDS(ON) (Typ 8.6m )@VGS=10V RDS(ON) 8.6m Low Gate Charge (Typ 92nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 Application Synchronous Rectification, 3 1 Li Battery Protect Board, Inverter 1. Gate 2.Drain 3.Source General Descr... See More ⇒

SHOW MORE

Detailed specifications: SWD062R08E8T, SWD062R68E7T, SWD065R03VLT, SWD065R68E7T, SWD068R08E8T, SWD068R68E7T, SWD070R08E7T, SWD075R06ET, IRF630, SWD078R08E8T, SWD085R68E7T, SWD086R68E7T, SWD088R08E8T, SWD106R95VS, SWD10N50K, SWD10N65K, SWD10N65K2

Keywords - SWD076R68E7T MOSFET specs

 SWD076R68E7T cross reference

 SWD076R68E7T equivalent finder

 SWD076R68E7T pdf lookup

 SWD076R68E7T substitution

 SWD076R68E7T replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

↑ Back to Top
.