SWD076R68E7T - параметры транзистора MOSFET, его аналоги, datasheet

SWD076R68E7T Datasheet (PDF)

..1. Size:728K samwin
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SW076R68E7TN-channel Enhanced mode TO-252 MOSFETFeaturesTO-252BVDSS : 68V High ruggednessID : 85A Low RDS(ON) (Typ 8m)@VGS=10V Low Gate Charge (Typ 80nC)RDS(ON) : 8m Improved dv/dt Capability 100% Avalanche Tested 212 Application:Synchronous Rectification,3Li Battery Protect Board, Inverter11. Gate 2.Drain 3.Source3General Descrip

9.1. Size:657K samwin
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SW075R06ETN-channel Enhanced mode TO-251/TO-252 MOSFETFeaturesTO-251 TO-252BVDSS : 60V High ruggednessID : 65A Low RDS(ON) (Typ 7.5m)@VGS=10V Low Gate Charge (Typ 78nC)RDS(ON) : 7.5m Improved dv/dt Capability 100% Avalanche Tested211 Application:Synchronous Rectification, 2233Li Battery Protect Board, Inverter11. Gate 2. Drai

9.2. Size:726K samwin
swd070r08e7t.pdf pdf_icon

SW070R08E7TN-channel Enhanced mode TO-252 MOSFETFeaturesTO-252BVDSS : 80V High ruggednessID : 95A Low RDS(ON) (Typ 7.6m)@VGS=10VRDS(ON) : 7.6m Low Gate Charge (Typ 101nC) Improved dv/dt Capability 2 100% Avalanche Tested12 Application:Synchronous Rectification,31Li Battery Protect Board, Inverter1. Gate 2.Drain 3.SourceGeneral Desc

9.3. Size:719K samwin
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SW078R08E8TN-channel Enhanced mode TO-252 MOSFETFeaturesTO-252BVDSS : 80V High ruggednessID : 95A Low RDS(ON) (Typ 8.6m)@VGS=10VRDS(ON) : 8.6m Low Gate Charge (Typ 92nC) Improved dv/dt Capability 2 100% Avalanche Tested12 Application:Synchronous Rectification,31Li Battery Protect Board, Inverter1. Gate 2.Drain 3.SourceGeneral Descr

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .