All MOSFET. SWD086R68E7T Datasheet

 

SWD086R68E7T Datasheet and Replacement


   Type Designator: SWD086R68E7T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 89.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 184 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0112 Ohm
   Package: TO252
 

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SWD086R68E7T Datasheet (PDF)

 ..1. Size:723K  samwin
 swd086r68e7t.pdf pdf_icon

SWD086R68E7T

SW086R68E7TN-channel Enhanced mode TO-252 MOSFETFeaturesTO-252BVDSS : 68V High ruggednessID : 70A Low RDS(ON) (Typ 9.6m)@VGS=10VRDS(ON) : 9.6m Low Gate Charge (Typ 66nC) Improved dv/dt Capability 2 100% Avalanche Tested12 Application:Synchronous Rectification,31Li Battery Protect Board, Inverter1. Gate 2.Drain 3.SourceGeneral Descr

 9.1. Size:750K  samwin
 swd088r08e8t.pdf pdf_icon

SWD086R68E7T

SW088R08E8TN-channel Enhanced mode TO-252 MOSFETFeaturesTO-252BVDSS : 80V High ruggednessID : 80A Low RDS(ON) (Typ 9.7m)@VGS=10VRDS(ON) : 9.7m Low Gate Charge (Typ 86nC) Improved dv/dt Capability 2 100% Avalanche Tested12 Application:Synchronous Rectification,31Li Battery Protect Board, Inverter1. Gate 2.Drain 3.SourceGeneral Descr

 9.2. Size:681K  samwin
 sw088r06vt swk088r06vt swi088r06vt swd088r06vt swha088r06vt.pdf pdf_icon

SWD086R68E7T

SW088R06VT N-channel Enhanced mode SOP-8/TO-251/TO-252/DFN5*6 MOSFET Features TO-251 TO-252 DFN5*6 SOP-8 BVDSS : 60V High ruggedness Low RDS(ON) (Typ 11m)@VGS=4.5V ID : 40A 5 6 Low RDS(ON) (Typ 9.2m)@VGS=10V 7 8 RDS(ON) : 11m@VGS=4.5V Low Gate Charge (Typ 48nC) 4 3 Improved dv/dt Capability 2 9.2m@VGS=10V 1 100% A

 9.3. Size:1012K  samwin
 swi088r06vt swd088r06vt swha088r06vt.pdf pdf_icon

SWD086R68E7T

SW088R06VTN-channel Enhanced mode TO-251/TO-252/DFN5*6 MOSFETFeaturesTO-251TO-252 DFN5*6BVDSS : 60V High ruggedness Low RDS(ON) (Typ 11m)@VGS=4.5VID : 40A1 8Low RDS(ON) (Typ 9.2m)@VGS=10V2 7RDS(ON) : 11m@VGS=4.5V Low Gate Charge (Typ 48nC)6354 Improved dv/dt Capability 9.2m@VGS=10V 100% Avalanche Tested1 122 Applicati

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Datasheet: SWD065R68E7T , SWD068R08E8T , SWD068R68E7T , SWD070R08E7T , SWD075R06ET , SWD076R68E7T , SWD078R08E8T , SWD085R68E7T , IRFP260 , SWD088R08E8T , SWD106R95VS , SWD10N50K , SWD10N65K , SWD10N65K2 , SWD10N80K2 , SWD110R03VT , SWD13N60K2 .

History: GSM4435S | AM7361P | KO3402 | NTD6416ANT | 2SJ585LS | NTMD3P03R2G | STD16N65M5

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