All MOSFET. SWD106R95VS Datasheet

 

SWD106R95VS Datasheet and Replacement


   Type Designator: SWD106R95VS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 95 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 49 nS
   Cossⓘ - Output Capacitance: 238 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: TO252
 

 SWD106R95VS substitution

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SWD106R95VS Datasheet (PDF)

 ..1. Size:760K  samwin
 swd106r95vs.pdf pdf_icon

SWD106R95VS

SW106R95VS N-channel Enhanced mode TO-252 MOSFET Features TO-252 BVDSS : 95V High ruggedness ID : 35A Low RDS(ON) (Typ 12.4m)@VGS=4.5V (Typ 11.6m)@VGS=10V RDS(ON) : 12.4m@VGS=4.5V Low Gate Charge (Typ 117nC) 11.6m@VGS=10V Improved dv/dt Capability 1 100% Avalanche Tested 2 2 Application:Synchronous Rectification, 3 Li

 9.1. Size:1355K  samwin
 swf10n50k swp10n50k swt10n50k swn10n50k swd10n50k.pdf pdf_icon

SWD106R95VS

SW10N50K N-channel Enhanced mode TO-220F/TO-220/TO-247/TO-251N/TO-252 MOSFET Features TO-220F TO-220 TO-247 TO-251N TO-252 BVDSS : 500V ID : 10A High ruggedness Low RDS(ON) (Typ 0.26)@VGS=10V RDS(ON) : 0.26 Low Gate Charge (Typ 29nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 1 2 2 2 2 2 Application:LED, PC Power, Cha

 9.2. Size:820K  samwin
 swf10n80k2 swn10n80k2 swd10n80k2.pdf pdf_icon

SWD106R95VS

SW10N80K2 N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET TO-220F TO-251N TO-252 BVDSS : 800V Features ID : 10A High ruggedness RDS(ON) : 0.58 Low RDS(ON) (Typ 0.58)@VGS=10V Low Gate Charge (Typ 27nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 1 2 2 3 3 3 Application:LED,Charger,PC Power 1. Gate 2. Drain

 9.3. Size:1328K  samwin
 swp10n65k swf10n65k swn10n65k swd10n65k swu10n65k swmn10n65k.pdf pdf_icon

SWD106R95VS

SW10N65K N-channel Enhanced mode TO-220/TO-220F/TO-251N /TO-252/ TO-262/TO-220SF MOSFET Features TO-220F TO-251N TO-262 TO-220 TO-252 TO-220SF BVDSS : 650V High ruggedness ID : 10A Low RDS(ON) (Typ 0.36)@VGS=10V RDS(ON) :0.36 Low Gate Charge (Typ29nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 2 1 2 1 2 1 2 1 2 1 2 Applicatio

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Datasheet: SWD068R68E7T , SWD070R08E7T , SWD075R06ET , SWD076R68E7T , SWD078R08E8T , SWD085R68E7T , SWD086R68E7T , SWD088R08E8T , K4145 , SWD10N50K , SWD10N65K , SWD10N65K2 , SWD10N80K2 , SWD110R03VT , SWD13N60K2 , SWD13N65K2 , SWD15N65J .

History: SI5515CDC | SJMN850R80ZF

Keywords - SWD106R95VS MOSFET datasheet

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