SWD15N65J MOSFET Datasheet: N-Ch, 650V, 15A. Full specification with pinout and replacement list

SWD15N65J Specs and Replacement

Type Designator: SWD15N65J

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 48 nS

Cossⓘ - Output Capacitance: 43 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm

Package: TO252

SWD15N65J substitution

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SWD15N65J datasheet

..1. Size:1002K samwin
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SW15N65J N-channel Enhanced mode TO-220SF/TO-252 MOSFET Features TO-220SF TO-252 BVDSS 650V High ruggedness ID 15A Low RDS(ON) (Typ 0.22 )@VGS=10V RDS(ON) 0.22 Low Gate Charge (Typ 29nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application LED , Charger, PC Power 3 3 1 1. Gate 2. Drain 3. Source General Description This p... See More ⇒

9.1. Size:997K samwin
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SW15P02 P-channel Enhanced mode TO-251/TO-252/DFN3*3/DFN5*6 MOSFET Features BVDSS -20V TO-251 TO-252 DFN3*3 DFN5*6 High ruggedness ID -15A Low RDS(ON) (Typ 9.4m )@VGS=-4.5V Low RDS(ON) (Typ 8.1m )@VGS=-10V RDS(ON) 9.4m @VGS=-4.5V Low Gate Charge (Typ 91nC) 8.1m @VGS=-10V Improved dv/dt Capability 1 100% Avalanche Tested 1 ... See More ⇒

9.2. Size:997K samwin
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