SWD15N65J MOSFET. Datasheet pdf. Equivalent
Type Designator: SWD15N65J
Marking Code: SW15N65J
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 156.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 15 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 29 nC
trⓘ - Rise Time: 48 nS
Cossⓘ - Output Capacitance: 43 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
Package: TO252
SWD15N65J Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SWD15N65J Datasheet (PDF)
swmn15n65j swd15n65j.pdf
SW15N65JN-channel Enhanced mode TO-220SF/TO-252 MOSFETFeaturesTO-220SF TO-252BVDSS : 650V High ruggednessID : 15A Low RDS(ON) (Typ 0.22)@VGS=10VRDS(ON) : 0.22 Low Gate Charge (Typ 29nC) Improved dv/dt Capability 2 100% Avalanche Tested 1122 Application:LED , Charger, PC Power 3311. Gate 2. Drain 3. SourceGeneral DescriptionThis p
swi15p02 swd15p02 swh15p02 swha15p02.pdf
SW15P02 P-channel Enhanced mode TO-251/TO-252/DFN3*3/DFN5*6 MOSFET Features BVDSS : -20V TO-251 TO-252 DFN3*3 DFN5*6 High ruggedness ID : -15A Low RDS(ON) (Typ 9.4m)@VGS=-4.5V Low RDS(ON) (Typ 8.1m)@VGS=-10V RDS(ON) : 9.4m @VGS=-4.5V Low Gate Charge (Typ 91nC) 8.1m @VGS=-10V Improved dv/dt Capability 1 100% Avalanche Tested 1
sw15p02 swi15p02 swd15p02 swh15p02 swha15p02.pdf
SW15P02 P-channel Enhanced mode TO-251/TO-252/DFN3*3/DFN5*6 MOSFET Features BVDSS : -20V TO-251 TO-252 DFN3*3 DFN5*6 High ruggedness ID : -15A Low RDS(ON) (Typ 9.4m)@VGS=-4.5V Low RDS(ON) (Typ 8.1m)@VGS=-10V RDS(ON) : 9.4m @VGS=-4.5V Low Gate Charge (Typ 91nC) 8.1m @VGS=-10V Improved dv/dt Capability 1 100% Avalanche Tested 1
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
