All MOSFET. SWD1N60DC Datasheet

 

SWD1N60DC MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWD1N60DC
   Marking Code: SW1N60DC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.3 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 32 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm
   Package: TO252

 SWD1N60DC Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWD1N60DC Datasheet (PDF)

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 swd1n60dc swsa1n60dc.pdf

SWD1N60DC SWD1N60DC

SW1N60DCN-channel Enhanced mode TO-252/SOT223 MOSFETFeaturesTO-252 SOT223BVDSS : 600VID : 1A High ruggedness Low RDS(ON) (Typ 7)@VGS=10VRDS(ON) : 7 Low Gate Charge (Typ6.3 nC) Improved dv/dt Capability 2 100% Avalanche Tested 1122 Application:Charger,Adaptor,LED 3311. Gate 2. Drain 3. Source3General DescriptionThis power MOSFET

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: PJP6NA90

 

 
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