All MOSFET. SWD1N60DC Datasheet

 

SWD1N60DC Datasheet and Replacement


   Type Designator: SWD1N60DC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 32 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm
   Package: TO252
 

 SWD1N60DC substitution

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SWD1N60DC Datasheet (PDF)

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SWD1N60DC

SW1N60DCN-channel Enhanced mode TO-252/SOT223 MOSFETFeaturesTO-252 SOT223BVDSS : 600VID : 1A High ruggedness Low RDS(ON) (Typ 7)@VGS=10VRDS(ON) : 7 Low Gate Charge (Typ6.3 nC) Improved dv/dt Capability 2 100% Avalanche Tested 1122 Application:Charger,Adaptor,LED 3311. Gate 2. Drain 3. Source3General DescriptionThis power MOSFET

Datasheet: SWD10N65K2 , SWD10N80K2 , SWD110R03VT , SWD13N60K2 , SWD13N65K2 , SWD15N65J , SWD160R12VT , SWD19N10 , TK10A60D , SWD200R10VT , SWD20N20D , SWD2N40DC , SWD2N60DC , SWD2N65K , SWD2N70D , SWD3205B , SWD340R10VT .

History: NCE40H11 | STI60N55F3 | NTTFS4C10N | HSBA3058 | SNN4010D | IRFB7446PBF | NP60N04MUG

Keywords - SWD1N60DC MOSFET datasheet

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