SWD6N65D PDF and Equivalents Search

 

SWD6N65D Specs and Replacement

Type Designator: SWD6N65D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 236 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 31 nS

Cossⓘ - Output Capacitance: 95 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm

Package: TO252

SWD6N65D substitution

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SWD6N65D datasheet

 ..1. Size:741K  samwin
 swd6n65d.pdf pdf_icon

SWD6N65D

SW6N65D N-channel Enhanced mode TO-252 MOSFET TO-252 BVDSS 650V Features ID 6A High ruggedness RDS(ON) 1.3 Low RDS(ON) (Typ 1.3 )@VGS=10V Low Gate Charge (Typ 22nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application LED , Charger 1. Gate 2. Drain 3. Source 3 General Description This power MOSFET is ... See More ⇒

 7.1. Size:987K  samwin
 swf6n65k swi6n65k swn6n65k swd6n65k swu6n65k swmn6n65k.pdf pdf_icon

SWD6N65D

SW6N65K N-channel Enhanced mode TO-220F/TO-251/TO-251N/TO-252/TO-262 /TO-220SF MOSFET Features TO251 TO220F TO251N TO252 TO262 TO220SF BVDSS 650V High ruggedness ID 6A Low RDS(ON) (Typ 0.8 )@VGS=10V RDS(ON) 0.8 Low Gate Charge (Typ 17nC) Improved dv/dt Capability 2 1 1 100% Avalanche Tested 1 1 1 1 2 2 2 2 2 2 3 3 Applicat... See More ⇒

 8.1. Size:835K  samwin
 swf6n60d swd6n60d swn6n60d.pdf pdf_icon

SWD6N65D

SW6N60D N-channel Enhanced mode TO-220F/TO-252/TO-251N MOSFET Features TO-220F TO-252 TO-251N BVDSS 600V High ruggedness ID 6A Low RDS(ON) (Typ 1.4 )@VGS=10V RDS(ON) 1.4 Low Gate Charge (Typ 23nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 3 3 3 Application UPS,Inverter,TV-POWER 1. Gate 2. Drain 3. Source... See More ⇒

 9.1. Size:1426K  samwin
 sw6n80d swn6n80d swf6n80d swd6n80d swu6n80d swj6n80d.pdf pdf_icon

SWD6N65D

SW6N80D N-channel Enhanced mode TO-251N/TO-220F/TO-252/TO-262/TO-262N MOSFET Features TO-251N TO-220F TO-252 TO-262 BVDSS 800V TO-262N ID 6A High ruggedness Low RDS(ON) (Typ 2.0 )@VGS=10V RDS(ON) 2.0 Low Gate Charge (Typ 32nC) Improved dv/dt Capability 2 1 1 1 1 1 100% Avalanche Tested 2 2 2 2 2 3 3 3 3 3 Application LED... See More ⇒

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Detailed specifications: SWD4N70L, SWD4N80D, SWD4N80K, SWD540, NCE60R360D, NCE60R360, NCE60R360F, SWD6N60D, STF13NM60N, SWD6N65K, SWD6N70DB, SWD6N80DE, SWD70N10V, SWD740D, SWD7N60K2F, SWD7N65DA, SWD7N65DD

Keywords - SWD6N65D MOSFET specs

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