SWD6N65D
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SWD6N65D
Маркировка: SW6N65D
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 236
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 6
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 22
nC
trⓘ -
Время нарастания: 31
ns
Cossⓘ - Выходная емкость: 95
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.7
Ohm
Тип корпуса:
TO252
Аналог (замена) для SWD6N65D
SWD6N65D
Datasheet (PDF)
..1. Size:741K samwin
swd6n65d.pdf 
SW6N65D N-channel Enhanced mode TO-252 MOSFET TO-252 BVDSS : 650V Features ID : 6A High ruggedness RDS(ON) : 1.3 Low RDS(ON) (Typ 1.3)@VGS=10V Low Gate Charge (Typ 22nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application: LED , Charger 1. Gate 2. Drain 3. Source 3 General Description This power MOSFET is
7.1. Size:987K samwin
swf6n65k swi6n65k swn6n65k swd6n65k swu6n65k swmn6n65k.pdf 
SW6N65K N-channel Enhanced mode TO-220F/TO-251/TO-251N/TO-252/TO-262 /TO-220SF MOSFET Features TO251 TO220F TO251N TO252 TO262 TO220SF BVDSS : 650V High ruggedness ID : 6A Low RDS(ON) (Typ 0.8)@VGS=10V RDS(ON) : 0.8 Low Gate Charge (Typ 17nC) Improved dv/dt Capability 2 1 1 100% Avalanche Tested 1 1 1 1 2 2 2 2 2 2 3 3 Applicat
8.1. Size:835K samwin
swf6n60d swd6n60d swn6n60d.pdf 
SW6N60D N-channel Enhanced mode TO-220F/TO-252/TO-251N MOSFET Features TO-220F TO-252 TO-251N BVDSS : 600V High ruggedness ID : 6A Low RDS(ON) (Typ 1.4)@VGS=10V RDS(ON) :1.4 Low Gate Charge (Typ 23nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 3 3 3 Application: UPS,Inverter,TV-POWER 1. Gate 2. Drain 3. Source
9.1. Size:1426K samwin
sw6n80d swn6n80d swf6n80d swd6n80d swu6n80d swj6n80d.pdf 
SW6N80D N-channel Enhanced mode TO-251N/TO-220F/TO-252/TO-262/TO-262N MOSFET Features TO-251N TO-220F TO-252 TO-262 BVDSS : 800V TO-262N ID : 6A High ruggedness Low RDS(ON) (Typ 2.0)@VGS=10V RDS(ON) : 2.0 Low Gate Charge (Typ 32nC) Improved dv/dt Capability 2 1 1 1 1 1 100% Avalanche Tested 2 2 2 2 2 3 3 3 3 3 Application:LED
9.3. Size:802K samwin
swd6n80de.pdf 
SW6N80DE N-channel Enhanced mode TO-252 MOSFET Features TO-252 BVDSS : 800V High ruggedness ID : 6A Low RDS(ON) (Typ 1.8)@VGS=10V RDS(ON) : 1.8 Low Gate Charge (Typ 36nC) Improved dv/dt Capability 100% Avalanche Tested 1 2 ESD protected 3 2 Application:LED , Charger, SMPS 1. Gate 2. Drain 3. Source 1 General Description
9.4. Size:964K samwin
swf6n70k swn6n70k swd6n70k.pdf 
SW6N70K N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features TO-220F TO-251N TO-252 BVDSS : 700V High ruggedness ID : 6A Low RDS(ON) (Typ 1.1)@VGS=10V RDS(ON) : 1.1 Low Gate Charge (Typ 13nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:Charger,LED,TV-Power 3 3 3 1. Gate 2. Drain 3. Source 1
9.5. Size:862K samwin
sw6n70k swf6n70k swn6n70k swd6n70k.pdf 
SW6N70K N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features TO-251N TO-220F TO-252 BVDSS : 700V High ruggedness ID : 6A Low RDS(ON) (Typ 1.1)@VGS=10V RDS(ON) : 1.1 Low Gate Charge (Typ 13nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:Charge,LED,TV-Power 3 3 3 1. Gate 2. Drain 3. Source
9.7. Size:1303K samwin
swn6n80d swf6n80d swd6n80d swu6n80d swj6n80d.pdf 
SW6N80DN-channel Enhanced mode TO-251N/TO-220F/TO-252/TO-262/TO-262N MOSFETFeaturesTO-251N TO-220F TO-252 BVDSS : 800VTO-262 TO-262NID : 6A High ruggedness Low RDS(ON) (Typ 2.0)@VGS=10VRDS(ON) : 2.0 Low Gate Charge (Typ 32nC) Improved dv/dt Capability 211 1 1 1 100% Avalanche Tested22 2 2 233 3 3 3 Application:LED , Charger, SMPS1.
9.8. Size:994K samwin
swf6n70db swd6n70db swn6n70db.pdf 
SW6N70DBN-channel Enhanced mode TO-220F /TO-252/TO-251N MOSFETFeaturesBVDSS : 700VTO-220F TO-252 TO-251NID : 6A High ruggedness Low RDS(ON) (Typ 1.4)@VGS=10VRDS(ON) : 1.4 Low Gate Charge (Typ 30nC) Improved dv/dt Capability 21 100% Avalanche Tested112223 Application:LED, PC Power, Charger 3311. Gate 2. Drain 3. Source3Gen
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