All MOSFET. SWD8N65D Datasheet

 

SWD8N65D MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWD8N65D
   Marking Code: SW8N65D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 173.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 32 nC
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 116 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO252

 SWD8N65D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWD8N65D Datasheet (PDF)

 ..1. Size:1171K  samwin
 swp8n65d swi8n65d swd8n65d swf8n65d swnx8n65d.pdf

SWD8N65D SWD8N65D

SW8N65D N-channel Enhanced mode TO-220/TO-251/TO-252/TO-220F/TO-251NX MOSFET BVDSS : 650V Features TO-220 TO-251 TO-252 TO-220F TO-251NX ID : 8A High ruggedness RDS(ON) : 1.1 Low RDS(ON) (Typ 1.1)@VGS=10V Low Gate Charge (Typ 32nC) 2 Improved dv/dt Capability 1 1 1 1 100% Avalanche Tested 1 2 2 2 2 2 3 3 3 3 Application:Charg

 0.1. Size:1132K  samwin
 sw8n65db swi8n65db swd8n65db swf8n65db swj8n65db.pdf

SWD8N65D SWD8N65D

SW8N65DB N-channel Enhanced mode TO-251/TO-252 /TO-220F/TO-262N MOSFET Features BVDSS : 650V TO-251 TO-252 TO-220F TO-262N ID : 8A High ruggedness Low RDS(ON) (Typ 1.0)@VGS=10V RDS(ON) : 1.0 Low Gate Charge (Typ 34nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 1 1 1 2 2 2 2 Application:LED, Charge, PC Power 3 3 3 3 1

 0.2. Size:1066K  samwin
 swi8n65db swd8n65db swf8n65db swj8n65db.pdf

SWD8N65D SWD8N65D

SW8N65DBN-channel Enhanced mode TO-251/TO-252 /TO-220F/TO-262N MOSFETFeatures BVDSS : 650VTO-251 TO-252TO-220F TO-262NID : 8A High ruggedness Low RDS(ON) (Typ 1.0)@VGS=10V RDS(ON) : 1.0 Low Gate Charge (Typ 34nC)2 Improved dv/dt Capability 1 100% Avalanche Tested 11 12 22 2 Application:LED, Charger, PC Power3 33 311. Gate 2. Drain

 9.1. Size:986K  samwin
 swf8n80k swi8n80k swn8n80k swd8n80k swu8n80k.pdf

SWD8N65D SWD8N65D

SW8N80K N-channel Enhancement mode TO-220F/TO-251/TO-251N/TO-252/TO-262 MOSFET Features BVDSS : 800V TO-220F TO-251 TO-251N TO-252 TO-262 ID : 8A High ruggedness Low RDS(ON) (Typ 0.67)@VGS=10V RDS(ON) : 0.67 Low Gate Charge (Typ 30nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 1 2 1 2 1 2 1 2 3 3 3 3 Application:Adapter,LE

 9.2. Size:791K  samwin
 swf8n70k swd8n70k.pdf

SWD8N65D SWD8N65D

SW8N70K N-channel Enhanced mode TO-220F/TO-252 MOSFET Features TO-252 TO-220F BVDSS : 700V ID : 8A High ruggedness Low RDS(ON) (Typ 0.55)@VGS=10V RDS(ON) : 0.55 Low Gate Charge (Typ 21nC) Improved dv/dt Capability 100% Avalanche Tested 1 1 2 2 2 Application:LED, PC Power, Charger 3 3 1. Gate 2. Drain 3. Source 1 General

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SFS06R03FF

 

 
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